Datasheet > 2SJ652_12

2SJ652_12

更新时间： 2024-11-25 12:51:15

品牌	Logo	应用领域
三洋 - SANYO		开关通用开关
页数	文件大小	规格书
7页	113K
描述
General-Purpose Switching Device Applications

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数据手册

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2SJ652_12 数据手册

2SJ 652

Ordering number : EN7625A

SANYO Sem iconductors

DATA S HEET

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

2SJ 652

Features

•

ON-resistance R (on)1=28.5m (typ.)

Input capacitance Ciss=4360pF (typ.)

4V drive

•

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

--60

±20

--28

--112

2.0

DSS

GSS

Drain Current (Pulse)

PW 10 s, duty cycle 1%

≤

°C

Allowable Power Dissipation

Tc=25°C

Channel Temperature

Tch

150

Storage Temperature

Tstg

--55 to +150

343

Avalanche Energy (Single Pulse) *1

Avalanche Current *2

--28

Note : 1 V =--30V, L=500 H, I =--28A (Fig.1)

2 L 500 H, single pulse

≤

Package Dimensions

unit : mm (typ)

Product & Package Information

• Package

: TO-220F-3SG

7529-001

• JEITA, JEDEC

: SC-67

•

Minimum Packing Quantity

: 50 pcs./magazine

4.7

10.16

3.18

2SJ652-1E

2.54

Marking

Electrical Connection

J652

LOT No.

2.76

1.47 MAX

0.8

DETAIL-A

(0.84)

0.5

1 : Gate

2 : Drain

3 : Source

FRAME

EMC

2.54

SANYO : TO-220F-3SG

http://semicon.sanyo.com/en/network

51612QA TKIM TC-00002759/72503 TSIM TA-4245

No.7625-1/7

12 3 4 5 6 7

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