Datasheet > 2SJ658

2SJ658

更新时间： 2024-11-25 03:45:15

品牌	Logo	应用领域
三洋 - SANYO		开关
页数	文件大小	规格书
4页	32K
描述
High-Speed Switching Applications

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SJ658 技术参数

生命周期：	Transferred	包装说明：	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.21.00.95	风险等级：	5.38
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	20 V
最大漏极电流 (Abs) (ID)：	2 A	最大漏极电流 (ID)：	2 A
最大漏源导通电阻：	0.15 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	O-PBCY-T3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	CYLINDRICAL
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	0.7 W
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	BOTTOM	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

2SJ658 数据手册

Ordering number : ENN7552

2SJ658

P-Channel Silicon MOSFET

2SJ658

High-Speed Switching Applications

Features

Package Dimensions

unit : mm

•

Low ON-resistance.

•

High-speed switching.

2178

•

2.5V drive.

[2SJ658]

5.0

4.0

0.45

0.5

0.44

0.45

1 : Source

2 : Drain

3 : Gate

1.3

SANYO : NP

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Symbol

Conditions

Ratings

--20

Unit

DSS

GSS

Gate-to-Source Voltage

Drain Current (DC)

±10

-- 2

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

PW≤10µs, duty cycle≤1%

--8

0.7

°C

Tch

150

Tstg

--55 to +150

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Symbol

Conditions

=--1mA, V =0

Unit

min

--20

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

(BR)DSS

=--20V, V =0

DS GS

--10

µA

DSS

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

SANYO Electric Co.,Ltd. Sem iconductor Com pany

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

31504 TS IM TA-100561 No.7552-1/4

12 3 4

中文翻译

下载PDF

与2SJ658相关器件

型号	品牌	获取价格	描述	数据表
2SJ659	SANYO	获取价格	P-Channel Silicon MOSFET General-Purpose Switching Device
2SJ659(SMP-FD)	ONSEMI	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,14A I(D),TO-263ABVAR
2SJ660	SANYO	获取价格	P-Channel Silicon MOSFET General-Purpose Switching Device
2SJ660(SMP)	ONSEMI	获取价格	Transistor,
2SJ660(SMP-FD)	ONSEMI	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,26A I(D),TO-263ABVAR
2SJ660-TL	ONSEMI	获取价格	Power Field-Effect Transistor, 26A I(D), 60V, 0.094ohm, 1-Element, P-Channel, Silicon, Met
2SJ661	ONSEMI	获取价格	P-Channel Power MOSFET
2SJ661	SANYO	获取价格	P-Channel Silicon MOSFET General-Purpose Switching Device
2SJ661(SMP-FD)	ONSEMI	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,38A I(D),TO-263ABVAR
2SJ661_12	SANYO	获取价格	General-Purpose Switching Device Applications

与2SJ658相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

40
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

32
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

60
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

56

产品中心

服务支持

精选活动

关于我们

帮助中心

2SJ658

2SJ658 技术参数

2SJ658 数据手册

与2SJ658相关器件

与2SJ658相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

2SJ658

2SJ658 技术参数

2SJ658 数据手册

与2SJ658相关器件

与2SJ658相关文章

您还可以找

您在本页遇到什么问题？