Datasheet > 2SJ647-A

2SJ647-A

更新时间： 2024-01-29 14:10:30

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
6页	62K
描述
Small Signal Field-Effect Transistor, 0.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SSP, SC-70, 3 PIN

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2SJ647-A 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	SC-70	包装说明：	SMALL OUTLINE, R-PDSO-G3
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.21
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	20 V
最大漏极电流 (ID)：	0.4 A	最大漏源导通电阻：	1.55 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e6	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	P-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	TIN BISMUTH
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

2SJ647-A 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ647

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The 2SJ647 is a switching device which can be driven directly

by a 2.5 V power source.

2.1 ± 0.1

The 2SJ647 features a low on-state resistance and excellent

switching characteristics, and is suitable for applications such

as power switch of portable machine and so on.

1.25 ± 0.1

FEATURES

• 2.5 V drive available

• Low on-state resistance

R^DS(on)1= 1.45 Ω MAX. (V^GS= −4.5 V, I^D= −0.2 A)

R^DS(on)2= 1.55 Ω MAX. (V^GS= −4.0 V, I^D= −0.2 A)

R^DS(on)3= 2.98 Ω MAX. (V^GS= −2.5 V, I^D= −0.15 A)

Marking

: Source

ORDERING INFORMATION

2 : Gate

3 : Drain

PART NUMBER

PACKAGE

2SJ647

SC-70 (SSP)

Remark Marking: H22

EQUIVALENT CIRCUIT

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^A= 25°C)

Drain Current (pulse) ^Note1

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T

−20

m12

m0.4

Drain

Body

Diode

Gate

m1.6

0.2

Total Power Dissipation ^Note2

°C

Gate

Protection

Diode

Channel Temperature

Tch

150

Source

Storage Temperature

Tstg

−55 to +150

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on FR-4 board of 2500 mm²x 1.1 mm.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with

caution for electrostatic discharge.

V^ESD±100 V TYP. at C = 200 pF, R = 0, Single Pulse.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No.

D16530EJ1V0DS00 (1st edition)

Date Published January 2003 NS CP(K)

Printed in Japan

2003

12 3 4 5 6

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2SJ648	NEC	MOS FIELD EFFECT TRANSISTOR	获取价格
2SJ648-A	NEC	Small Signal Field-Effect Transistor, 0.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal	获取价格
2SJ649	NEC	MOS FIELD EFFECT TRANSISTOR	获取价格

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