Datasheet > 2SJ648-A

2SJ648-A

更新时间： 2024-11-09 20:05:31

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
6页	136K
描述
Small Signal Field-Effect Transistor, 0.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, USM, SC-75, 3 PIN

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技术参数
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2SJ648-A 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	USM, SC-75, 3 PIN	Reach Compliance Code：	compliant
风险等级：	5.76	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V	最大漏极电流 (ID)：	0.4 A
最大漏源导通电阻：	1.55 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G3	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	260
极性/信道类型：	P-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	10
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

2SJ648-A 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ648

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The 2SJ648 is a switching device which can be driven directly by a

2.5 V power source.

+0.1

0.3

–0

0.15

–0.05

The 2SJ648 features a low on-state resistance and excellent

switching characteristics, and is suitable for applications such as

power switch of portable machine and so on.

0 to 0.1

FEATURES

• 2.5 V drive available

+0.1

–0

• Low on-state resistance

0.2

0.5

R^DS(on)1= 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.2 A)

R^DS(on)2= 1.55 Ω MAX. (VGS = −4.0 V, ID = −0.2 A)

R^DS(on)3= 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A)

0.6

0.5

0.75 0.05

1.0

1.6 0.1

1: Source

2: Gate

3: Drain

ORDERING INFORMATION

PART NUMBER

2SJ648

PACKAGE

SC-75 (USM)

Marking: H1

EQUIVALENT CIRCUIT

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC)

VDSS

VGSS

I^D(DC)

I^D(pulse)

P^T

−20

m12

m0.4

m1.6

200

Body

Diode

Gate

Drain Current (pulse) ^Note1

Total Power Dissipation ^Note2

Channel Temperature

Gate

Protection

Diode

°C

Source

T^ch

150

Storage Temperature

T^stg

−55 to +150

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on ceramic substrate of 300 mm²x 0.64 mm.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with

caution for electrostatic discharge.

V^ESD= ±100 V TYP. (C = 200 pF, R = 0 Ω, Single pulse)

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D16597EJ2V0DS00 (2nd edition)

The mark

shows major revised points.

Date Published November 2004 NS CP(K)

Printed in Japan

2003

12 3 4 5 6

中文翻译

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与2SJ648-A相关器件

型号	品牌	获取价格	描述	数据表
2SJ649	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
2SJ650	SANYO	获取价格	DC / DC Converter Applications
2SJ651	SANYO	获取价格	P CHANNEL SILICON TRASISTOR
2SJ651_03	SANYO	获取价格	DC / DC Converter Applications
2SJ652	SANYO	获取价格	General-Purpose Switching Device Applications
2SJ652_12	SANYO	获取价格	General-Purpose Switching Device Applications
2SJ652-1E	ONSEMI	获取价格	General-Purpose Switching Device Applications
2SJ652-RA11	ONSEMI	获取价格	General-Purpose Switching Device Applications
2SJ653	SANYO	获取价格	General-Purpose Switching Device Applications
2SJ654	SANYO	获取价格	DC / DC Converter Applications

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