是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.61 |
配置: | Single | 最大漏极电流 (Abs) (ID): | 0.4 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 0.2 W | 子类别: | Other Transistors |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SJ648 | NEC |
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MOS FIELD EFFECT TRANSISTOR | |
2SJ648-A | NEC |
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Small Signal Field-Effect Transistor, 0.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal | |
2SJ649 | NEC |
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MOS FIELD EFFECT TRANSISTOR | |
2SJ650 | SANYO |
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DC / DC Converter Applications | |
2SJ651 | SANYO |
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P CHANNEL SILICON TRASISTOR | |
2SJ651_03 | SANYO |
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DC / DC Converter Applications | |
2SJ652 | SANYO |
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General-Purpose Switching Device Applications | |
2SJ652_12 | SANYO |
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General-Purpose Switching Device Applications | |
2SJ652-1E | ONSEMI |
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General-Purpose Switching Device Applications | |
2SJ652-RA11 | ONSEMI |
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General-Purpose Switching Device Applications |