2SJ647

更新时间： 2024-11-05 22:49:31

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
6页	65K
描述
MOS FIELD EFFECT TRANSISTOR

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中文翻译

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技术参数
数据手册

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2SJ647 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	SSP, SC-70, 3 PIN	Reach Compliance Code：	compliant
风险等级：	5.78	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	20 V	最大漏极电流 (ID)：	0.4 A
最大漏源导通电阻：	1.55 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G3	JESD-609代码：	e0
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	P-CHANNEL
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN LEAD	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

2SJ647 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SJ647

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The 2SJ647 is a switching device which can be driven directly

by a 2.5 V power source.

2.1 ± 0.1

The 2SJ647 features a low on-state resistance and excellent

switching characteristics, and is suitable for applications such

as power switch of portable machine and so on.

1.25 ± 0.1

FEATURES

• 2.5 V drive available

• Low on-state resistance

R^DS(on)1= 1.45 Ω MAX. (V^GS= −4.5 V, I^D= −0.2 A)

R^DS(on)2= 1.55 Ω MAX. (V^GS= −4.0 V, I^D= −0.2 A)

R^DS(on)3= 2.98 Ω MAX. (V^GS= −2.5 V, I^D= −0.15 A)

Marking

: Source

ORDERING INFORMATION

2 : Gate

3 : Drain

PART NUMBER

PACKAGE

2SJ647

SC-70 (SSP)

Remark Marking: H22

EQUIVALENT CIRCUIT

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^A= 25°C)

Drain Current (pulse) ^Note1

V^DSS

V^GSS

I^D(DC)

I^D(pulse)

P^T

−20

m12

m0.4

Drain

Body

Diode

Gate

m1.6

0.2

Total Power Dissipation ^Note2

°C

Gate

Protection

Diode

Channel Temperature

Tch

150

Source

Storage Temperature

Tstg

−55 to +150

Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Mounted on FR-4 board of 2500 mm²x 1.1 mm.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with

caution for electrostatic discharge.

V^ESD±100 V TYP. at C = 200 pF, R = 0, Single Pulse.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No.

D16530EJ1V0DS00 (1st edition)

Date Published January 2003 NS CP(K)

Printed in Japan

2003

12 3 4 5 6

中文翻译

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与2SJ647相关器件

型号	品牌	获取价格	描述	数据表
2SJ647-A	NEC	获取价格	Small Signal Field-Effect Transistor, 0.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
2SJ647-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,400MA I(D),SC-70
2SJ647-T1-A	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,400MA I(D),SC-70
2SJ647-T1-AT	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,400MA I(D),SC-70
2SJ648	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
2SJ648-A	NEC	获取价格	Small Signal Field-Effect Transistor, 0.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal
2SJ649	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
2SJ650	SANYO	获取价格	DC / DC Converter Applications
2SJ651	SANYO	获取价格	P CHANNEL SILICON TRASISTOR
2SJ651_03	SANYO	获取价格	DC / DC Converter Applications

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