2SC3356-T1B-Q

更新时间： 2024-11-01 13:04:19

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体晶体管光电二极管放大器
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9页	189K
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2SC3356-T1B-Q 数据手册

PreliminaryData Sheet

2SC3356

R09DS0021EJ0300

Rev.3.00

NPN Silicon RF Transistor

Jun 28, 2011

NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold

FEATURES

•

Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz

High power gain : MAG = 13 dB TYP. @ V^CE= 10 V, IC = 20 mA, f = 1 GHz

<R>

ORDERING INFORMATION

Part Number

2SC3356

Order Number

2SC3356-A

Package

Quantity

Supplying Form

3-pin Minimold 50 pcs (Non reel)

• 8 mm wide embossed taping

• Pin 3 (Collector) face the perforation side of the tape

(Pb-Free)

2SC3356-T1B

2SC3356-T1B-A

3 kpcs/reel

Remark To order evaluation samples, please contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

Unit

3.0

100

°C

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

200

150

Tstg

−65 to +150

Note Free air

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

R09DS0021EJ0300 Rev.3.00

Jun 28, 2011

Page 1 of 7

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