Datasheet > 2SC3357(NE85634)

2SC3357(NE85634)

更新时间： 2024-11-22 23:20:15

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8页	88K
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Discrete

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2SC3357(NE85634) 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC3357

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

3-PIN POWER MINIMOLD

FEATURES

•

Low noise and high gain

NF = 1.1 dB TYP., G^a= 7.5 dB TYP. @ V^CE= 10 V, I^C= 7 mA, f = 1 GHz

NF = 1.8 dB TYP., G^a= 9.0 dB TYP. @ V^CE= 10 V, I^C= 40 mA, f = 1 GHz

High power gain : MAG = 10 dB TYP. @ I^C= 40 mA, f = 1 GHz

Large P^tot: P^tot= 1.2 W (Mounted on 16 cm²× 0.7 mm (t) ceramic substrate)

Small package : 3-pin power minimold package

•

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC3357

25 pcs (Non reel)

1 kpcs/reel

• 12 mm wide embossed taping

• Collector face the perforation side of the tape

2SC3357-T1

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 25 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

3.0

100

tot ^Note

1.2

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

°C

T^stg

−65 to +150

Note Mounted on 16 cm²× 0.7 mm (t) ceramic substrate

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10211EJ01V0DS (1st edition)

(Previous No. P10357EJ4V1DS00)

The mark • shows major revised points.

Date Published January 2003 CP(K)

Printed in Japan

NEC Compound Semiconductor Devices 1985, 2003

12 3 4 5 6 7 8

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