Datasheet > 2SC3357RH

2SC3357RH

更新时间： 2024-11-23 20:13:39

品牌	Logo	应用领域
无锡固电 - ISC		/
页数	文件大小	规格书
6页	319K
描述
Transistor

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技术参数
数据手册

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2SC3357RH 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.59
Base Number Matches：	1

2SC3357RH 数据手册

INCHANGE Semiconductor

iscRF Product Specification

isc Silicon NPN RF Transistor

2SC3357

DESCRIPTION

·Low Noise and High Gain

NF = 1.1 dB TYP., G_a= 8.0 dB TYP.

@V_CE= 10 V, I_C= 7 mA, f = 1.0 GHz

NF = 1.8 dB TYP., G_a= 9.0 dB TYP.

@V_CE= 10 V, I_C= 40 mA, f = 1.0 GHz

APPLICATIONS

·Designed for low noise amplifier at VHF, UHF and CATV

band.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

UNIT

3.0

Collector Current-Continuous

0.1

Collector Power Dissipation

@T_C=25℃

P_C

1.2

℃

T_J

Junction Temperature

150

Storage Temperature Range

-65~150

T_stg

isc Website：www.iscsemi.cn

12 3 4 5 6

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与2SC3357RH相关器件

型号	品牌	获取价格	描述	数据表
2SC3357-RH	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC3357-RH-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC3357RH-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-89
2SC3357-T1	RENESAS	获取价格	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER
2SC3357-T1-A	NEC	获取价格	2SC3357-T1-A
2SC3357-T1RE	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC3357-T1RE	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-3
2SC3357-T1RE-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC3357-T1RF	RENESAS	获取价格	暂无描述
2SC3357-T1RF-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic