Datasheet > 2SC3357-T1-A

2SC3357-T1-A

更新时间： 2024-01-29 22:21:15

品牌	Logo	应用领域
日电电子 - NEC		放大器 ISM频段晶体管
页数	文件大小	规格书
8页	86K
描述
2SC3357-T1-A

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中文翻译

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技术参数
数据手册

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2SC3357-T1-A 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PSSO-F3
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	1 week
风险等级：	5.42	Base Number Matches：	1

2SC3357-T1-A 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC3357

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

3-PIN POWER MINIMOLD

FEATURES

•

Low noise and high gain

NF = 1.1 dB TYP., G^a= 7.5 dB TYP. @ V^CE= 10 V, I^C= 7 mA, f = 1 GHz

NF = 1.8 dB TYP., G^a= 9.0 dB TYP. @ V^CE= 10 V, I^C= 40 mA, f = 1 GHz

High power gain : MAG = 10 dB TYP. @ I^C= 40 mA, f = 1 GHz

Large P^tot: P^tot= 1.2 W (Mounted on 16 cm²× 0.7 mm (t) ceramic substrate)

Small package : 3-pin power minimold package

•

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC3357

25 pcs (Non reel)

1 kpcs/reel

• 12 mm wide embossed taping

• Collector face the perforation side of the tape

2SC3357-T1

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 25 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

3.0

100

tot ^Note

1.2

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

°C

T^stg

−65 to +150

Note Mounted on 16 cm²× 0.7 mm (t) ceramic substrate

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10211EJ01V0DS (1st edition)

(Previous No. P10357EJ4V1DS00)

The mark • shows major revised points.

Date Published January 2003 CP(K)

Printed in Japan

NEC Compound Semiconductor Devices 1985, 2003

12 3 4 5 6 7 8

中文翻译

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与2SC3357-T1-A相关器件

型号	品牌	获取价格	描述	数据表
2SC3357-T1RE	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC3357-T1RE	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-3
2SC3357-T1RE-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC3357-T1RF	RENESAS	获取价格	暂无描述
2SC3357-T1RF-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC3357-T1RH	RENESAS	获取价格	UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-3
2SC3357-T1RH-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC3357-T2	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
2SC3358	UTC	获取价格	NPN SILICON PLANAR EPITAXIAL TRANSISTOR
2SC3359	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 300MA I(C) \| TO-92

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