5秒后页面跳转
2SC3359 PDF预览

2SC3359

更新时间: 2024-02-21 20:04:15
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关
页数 文件大小 规格书
2页 194K
描述
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | TO-92

2SC3359 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.7
Is Samacsys:N最大集电极电流 (IC):0.3 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):180JESD-30 代码:R-PSIP-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.3 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:TIN SILVER COPPER
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):150 MHz
Base Number Matches:1

2SC3359 数据手册

 浏览型号2SC3359的Datasheet PDF文件第2页 

与2SC3359相关器件

型号 品牌 获取价格 描述 数据表
2SC3359/P ROHM

获取价格

Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2SC3359/PQ ROHM

获取价格

Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2SC3359/PR ROHM

获取价格

Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2SC3359/Q ROHM

获取价格

Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2SC3359/QR ROHM

获取价格

Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2SC3359/R ROHM

获取价格

Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
2SC3359P ROHM

获取价格

300mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SC3359Q ROHM

获取价格

300mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SC3359R ROHM

获取价格

300mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
2SC3359S ROHM

获取价格

Power Transistor (80V, 0.3A)