是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.22 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 0.1 A |
基于收集器的最大容量: | 1 pF | 集电极-发射极最大电压: | 12 V |
配置: | SINGLE | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PSSO-F3 | JESD-609代码: | e6 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN BISMUTH |
端子形式: | FLAT | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 6500 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC3357-T2 | NEC |
获取价格 |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
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2SC3358 | UTC |
获取价格 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |
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2SC3359 | ETC |
获取价格 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 300MA I(C) | TO-92 |
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2SC3359/P | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 |
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2SC3359/PQ | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 |
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2SC3359/PR | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 |
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2SC3359/Q | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 |
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2SC3359/QR | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 |
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2SC3359/R | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 |
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2SC3359P | ROHM |
获取价格 |
300mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
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