是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.17 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 0.1 A |
基于收集器的最大容量: | 1 pF | 集电极-发射极最大电压: | 12 V |
配置: | SINGLE | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-PSSO-F3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | FLAT | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 6500 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SC3357-T1-A | NEC |
获取价格 |
2SC3357-T1-A | |
2SC3357-T1RE | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
2SC3357-T1RE | RENESAS |
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UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-3 | |
2SC3357-T1RE-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
2SC3357-T1RF | RENESAS |
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暂无描述 | |
2SC3357-T1RF-A | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
2SC3357-T1RH | RENESAS |
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UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, POWER, MINIMOLD PACKAGE-3 | |
2SC3357-T1RH-A | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic | |
2SC3357-T2 | NEC |
获取价格 |
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD | |
2SC3358 | UTC |
获取价格 |
NPN SILICON PLANAR EPITAXIAL TRANSISTOR |