2SC3357-RE-A

更新时间： 2024-09-29 13:04:15

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号双极晶体管射频小信号双极晶体管放大器
页数	文件大小	规格书
8页	79K
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中文翻译

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数据手册

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2SC3357-RE-A 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC3357

NPN SILICON EPITAXIAL TRANSISTOR

POWER MINI MOLD

DESCRIPTION

PACKAGE DIMENSIONS

The 2SC3357 is an NPN silicon epitaxial transistor designed for

low noise amplifier at VHF, UHF and CATV band.

(Unit: mm)

It has large dynamic range and good current characteristic.

4.5±0.1

1.6±0.2

1.5±0.1

FEATURES

•

Low Noise and High Gain

NF = 1.1 dB TYP., G^a= 8.0 dB TYP. @V^CE= 10 V,

I^C= 7 mA, f = 1.0 GHz

NF = 1.8 dB TYP., G^a= 9.0 dB TYP. @V^CE= 10 V,

I^C= 40 mA, f = 1.0 GHz

0.42

0.42±0.06

±0.06

1.5

0.47

±0.06

−0.03

+0.05

3.0

•

Large P^Tin Small Package

P^T: 2 W with 16 cm²× 0.7 mm Ceramic Substrate.

0.41

Term, Connection

E : Emitter

C : Collector (Fin)

B : Base

ABSOLUTE MAXIMUM RATINGS (T^A= 25 °C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

V^CBO

V^CEO

V^EBO

I^C

(SOT-89)

3.0

100

Total Power Dissipation

Thermal Resistance

P^T*

1.2

R^th(j-a)*

T^j

62.5

°C/W

°C

Junction Temperature

Storage Temperature

150

T^stg

−65 to +150

* mounted on 16 cm²× 0.7 mm Ceramic Substrate

Document No. P10357EJ4V1DS00 (4th edition)

Date Published March 1997 N

Printed in Japan

1985

12 3 4 5 6 7 8

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与2SC3357-RE-A相关器件

型号	品牌	获取价格	描述	数据表
2SC3357RE-T1	RENESAS	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-89
2SC3357RE-T1-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-89
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2SC3357-RF	NEC	获取价格	暂无描述
2SC3357-RF-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC3357RF-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-89
2SC3357RF-T1-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-89
2SC3357RH	ISC	获取价格	Transistor
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