2SC3357RF

更新时间： 2024-11-18 23:20:15

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管
页数	文件大小	规格书
8页	79K
描述
TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 100MA I(C) \| TO-243

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中文翻译

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数据手册

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2SC3357RF 数据手册

DATA SHEET

SILICON TRANSISTOR

2SC3357

NPN SILICON EPITAXIAL TRANSISTOR

POWER MINI MOLD

DESCRIPTION

PACKAGE DIMENSIONS

The 2SC3357 is an NPN silicon epitaxial transistor designed for

low noise amplifier at VHF, UHF and CATV band.

(Unit: mm)

It has large dynamic range and good current characteristic.

4.5±0.1

1.6±0.2

1.5±0.1

FEATURES

•

Low Noise and High Gain

NF = 1.1 dB TYP., G^a= 8.0 dB TYP. @V^CE= 10 V,

I^C= 7 mA, f = 1.0 GHz

NF = 1.8 dB TYP., G^a= 9.0 dB TYP. @V^CE= 10 V,

I^C= 40 mA, f = 1.0 GHz

0.42

0.42±0.06

±0.06

1.5

0.47

±0.06

−0.03

+0.05

3.0

•

Large P^Tin Small Package

P^T: 2 W with 16 cm²× 0.7 mm Ceramic Substrate.

0.41

Term, Connection

E : Emitter

C : Collector (Fin)

B : Base

ABSOLUTE MAXIMUM RATINGS (T^A= 25 °C)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

V^CBO

V^CEO

V^EBO

I^C

(SOT-89)

3.0

100

Total Power Dissipation

Thermal Resistance

P^T*

1.2

R^th(j-a)*

T^j

62.5

°C/W

°C

Junction Temperature

Storage Temperature

150

T^stg

−65 to +150

* mounted on 16 cm²× 0.7 mm Ceramic Substrate

Document No. P10357EJ4V1DS00 (4th edition)

Date Published March 1997 N

Printed in Japan

1985

12 3 4 5 6 7 8

中文翻译

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与2SC3357RF相关器件

型号	品牌	获取价格	描述	数据表
2SC3357-RF	NEC	获取价格	暂无描述
2SC3357-RF-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC3357RF-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-89
2SC3357RF-T1-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-89
2SC3357RH	ISC	获取价格	Transistor
2SC3357RH	NEC	获取价格	TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 100MA I(C) \| TO-243
2SC3357-RH	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC3357-RH-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic
2SC3357RH-A	RENESAS	获取价格	TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-89
2SC3357-T1	RENESAS	获取价格	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER