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2SC3357 PDF预览

2SC3357

更新时间: 2024-09-28 17:01:03
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
5页 499K
描述
120V,0.1A,General Purpose NPN Bipolar Transistor

2SC3357 数据手册

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Product Specification  
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD  
2SC3357  
FEATURES  
Low Noise and High Gain  
NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V,  
IC = 7 mA, f = 1.0 GHz  
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V,  
Large PT in Small Package  
PT : 2 W with 16 cm2*  
APPLICATIONS  
The 2SC3357 is an NPN silicon epitaxial transistor designed  
For low noise amplifier at VHF, UHF and CATV band.  
It has large dynamic range and good current characteristic.  
SOT-89  
ORDERING INFORMATION  
Type No.  
2SC3357  
Marking  
Package Code  
RH/RF/RE  
SOT-89  
MAXIMUM RATING @ Ta=25unless otherwise specified  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
20  
Units  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
12  
V
3.0  
V
Collector Current -Continuous  
100  
mA  
备注 1  
Total Power Dissipation  
PT  
1.2  
W
备注 1  
Thermal Resistance  
Junction Temperature  
Storage Temperature  
Rth(j-a)  
62.5  
150  
C/W  
Tj  
Tstg  
-65 to +150  
备注 1mounted on 16 cm2 0.7 mm Ceramic Substrate  
STM0238A: May 2019 [P]  
www.gmesemi.com  
1

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