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2SC3357

更新时间: 2024-02-13 11:26:00
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管放大器
页数 文件大小 规格书
1页 54K
描述
NPN Silicon RF Transistor

2SC3357 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:POWER, MINIMOLD PACKAGE-3Reach Compliance Code:compliant
风险等级:5.6其他特性:LOW NOISE
外壳连接:COLLECTOR最大集电极电流 (IC):0.1 A
基于收集器的最大容量:1 pF集电极-发射极最大电压:12 V
配置:SINGLE最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-PSSO-F3JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN BISMUTH端子形式:FLAT
端子位置:SINGLE处于峰值回流温度下的最长时间:10
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):6500 MHzBase Number Matches:1

2SC3357 数据手册

  
SMD Type  
Transistors  
NPN Silicon RF Transistor  
2SC3357  
Features  
Low Noise and High Gain  
NF = 1.1 dB TYP., Ga = 7.5 dB TYP. @VCE = 10 V,  
IC = 7 mA, f = 1.0 GHz  
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V,  
IC = 40 mA, f = 1.0 GHz  
High power gain : MAG = 10 dB TYP. @ IC = 40 mA, f = 1 GHz  
Absolute Maximum Ratings Ta = 25  
Parameter  
Symbol  
Rating  
20  
Unit  
V
Collector-base voltage  
VCBO  
VCEO  
VEBO  
IC  
Collector-emitter voltage  
Emitter-base voltage  
12  
V
3.0  
V
Collector current  
100  
mA  
W
Total power dissipation  
Junction temperature  
PT*  
1.2  
Tj  
150  
Storage temperature  
Tstg  
-65 to +150  
62.5  
Thermal Resistance  
Rth(j-a)*  
/W  
* mounted on 16 cm2 X 0.7 mm(t) Ceramic Substrate  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Emitter cutoff current  
DC current gain  
Symbol  
ICBO  
IEBO  
Testconditons  
Min  
50  
Typ  
Max  
1.0  
Unit  
A
VCB = 10V,IE=0  
VEB = 1.0V,IC=0  
1.0  
A
hFE *1 VCE =10V,Ic=20mA  
120  
9
250  
|S21e|2  
Insertion Power Gain  
VCE = 10 V, IC = 20 mA, f = 1.0 GHz  
VCE = 10 V, IC = 7 mA, f = 1.0 GHz  
dB  
dB  
1.1  
1.8  
0.65  
6.5  
Noise Figure  
NF  
VCE = 10 V, IC = 40 mA, f = 1.0 GHz  
VCB = 10 V, IE = 0, f = 1.0 MHz  
VCE = 10V ,Ic=20mA  
3.0  
1.0  
dB  
Output Capacitance  
Cob  
fT  
pF  
Transition frequency  
GHz  
*1 Pulse Measurement PW 350 ms, Duty Cycle  
2 %  
*2 The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitnace bridge.  
hFE Classification  
Marking  
Rank  
RH  
RH  
RF  
RF  
RE  
RE  
hFE  
20 100  
80 160  
125 250  
1
www.kexin.com.cn  

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