Datasheet > 2SC3356-T1R23-A

2SC3356-T1R23-A

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
8页	83K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MINIMOLD PACKAGE-3

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2SC3356-T1R23-A 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC3356

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR MICROWAVE LOW-NOISE AMPLIFICATION

3-PIN MINIMOLD

FEATURES

•

Low noise and high gain : NF = 1.1 dB TYP., G^a= 11 dB TYP. @ V^CE= 10 V, I^C= 7 mA, f = 1 GHz

High power gain : MAG = 13 dB TYP. @ V^CE= 10 V, I^C= 20 mA, f = 1 GHz

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC3356

50 pcs (Non reel)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 3 (Collector) face the perforation side of the tape

2SC3356-T1

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

3.0

100

°C

tot ^Note

200

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

T^stg

−65 to +150

Note Free air

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10209EJ01V0DS (1st edition)

(Previous No. P10356EJ5V1DS00)

The mark • shows major revised points.

Date Published January 2003 CP(K)

Printed in Japan

NEC Compound Semiconductor Devices 1985, 2003

12 3 4 5 6 7 8

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