Datasheet > 2SC3356-T1R23-A

2SC3356-T1R23-A

更新时间： 2023-07-15 00:00:00

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
8页	83K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MINIMOLD PACKAGE-3

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2SC3356-T1R23-A 数据手册

2SC3356

NOISE FIGURE vs.

COLLECTOR CURRENT

NOISE FIGURE, INSERTION POWER GAIN

vs. COLLECTOR TO EMITTER VOLTAGE

CE = 10 V

f = 1 GHz

= 20 mA

f = 1 GHz

|S21e

0.5

50 70

Collector Current I

(mA)

Collector to Emitter Voltage V^CE(V)

Remark The graphs indicate nominal characteristics.

S-PARAMETERS

S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form

(S2P) that enables direct import to a microwave circuit simulator without keyboard input.

Click here to download S-parameters.

[RF and Microwave] → [Device Parameters]

URL http://www.csd-nec.com/

Data Sheet PU10209EJ01V0DS

1 2 345 6 7 8

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型号	品牌	描述	获取价格	数据表
2SC3356-T1R24-A	NEC	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic	获取价格
2SC3356-T1R25	NEC	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic	获取价格
2SC3356-T1R25-A	NEC	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic	获取价格
2SC3356-T1R-A	NEC	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic	获取价格
2SC3356-T1S	NEC	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic	获取价格
2SC3356-T1S-A	NEC	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic	获取价格