Datasheet > 2SC3356-T1R25

2SC3356-T1R25

更新时间： 2024-02-02 19:17:49

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
8页	83K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MINIMOLD PACKAGE-3

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

2SC3356-T1R25 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	包装说明：	SMALL OUTLINE, R-PDSO-G3
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.21.00.75
风险等级：	5.56	最大集电极电流 (IC)：	0.1 A
基于收集器的最大容量：	1 pF	集电极-发射极最大电压：	12 V
配置：	SINGLE	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-PDSO-G3	JESD-609代码：	e6
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子面层：	TIN BISMUTH
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	7000 MHz
Base Number Matches：	1

2SC3356-T1R25 数据手册

DATA SHEET

NPN SILICON RF TRANSISTOR

2SC3356

NPN EPITAXIAL SILICON RF TRANSISTOR

FOR MICROWAVE LOW-NOISE AMPLIFICATION

3-PIN MINIMOLD

FEATURES

•

Low noise and high gain : NF = 1.1 dB TYP., G^a= 11 dB TYP. @ V^CE= 10 V, I^C= 7 mA, f = 1 GHz

High power gain : MAG = 13 dB TYP. @ V^CE= 10 V, I^C= 20 mA, f = 1 GHz

ORDERING INFORMATION

Part Number

Quantity

Supplying Form

2SC3356

50 pcs (Non reel)

3 kpcs/reel

• 8 mm wide embossed taping

• Pin 3 (Collector) face the perforation side of the tape

2SC3356-T1

Remark To order evaluation samples, contact your nearby sales office.

The unit sample quantity is 50 pcs.

ABSOLUTE MAXIMUM RATINGS (T^A= +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Ratings

Unit

3.0

100

°C

tot ^Note

200

Total Power Dissipation

Junction Temperature

Storage Temperature

T^j

150

T^stg

−65 to +150

Note Free air

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PU10209EJ01V0DS (1st edition)

(Previous No. P10356EJ5V1DS00)

The mark • shows major revised points.

Date Published January 2003 CP(K)

Printed in Japan

NEC Compound Semiconductor Devices 1985, 2003

12 3 4 5 6 7 8

中文翻译

下载PDF

与2SC3356-T1R25相关器件

型号	品牌	描述	获取价格	数据表
2SC3356-T1R25-A	NEC	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic	获取价格
2SC3356-T1R-A	NEC	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic	获取价格
2SC3356-T1S	NEC	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic	获取价格
2SC3356-T1S-A	NEC	RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silic	获取价格
2SC3356W	BL Galaxy Electrical	Silicon Epitaxial Planar Transistor	获取价格
2SC3356W	BL Galaxy Electrical	12V,0.1A,General Purpose NPN Bipolar Transistor	获取价格