Datasheet > 2SC3356W

2SC3356W

更新时间： 2024-11-02 17:01:39

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	384K
描述
12V,0.1A,General Purpose NPN Bipolar Transistor

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数据手册

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2SC3356W 数据手册

NPN Silicon Epitaxial Planar Transistor

2SC3356W

Features



Low noise and high gain

High power gain

Mechanic al Data



Case: SOT-323

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-323

Ordering Information

Part Number

Package

SOT-323

Shipping Quantity

Marking Code

2SC3356W

3000 pcs / Tape & Reel

R23/R24/R25

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (continuous)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

Unit

100

Thermal Characteristics

Parameter

Collector Power Dissipation ^*1

Symbol

P_C

Value

200

Unit

°C/W

°C

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case ^*1

Thermal Resistance Junction-to-Lead ^*1

Junction Temperature Range

R_θJA

R_θJC

R_θJL

T_J

625

427

322

-55 ~ +150

-65 ~ +150

Storage Temperature Range

T_STG

°C

Note 1: The data tested by surface mounted on a 15mm * 15mm * 1mm FR4-epoxy P.C.B

STM0401A: September 2020

www.gmesemi.com

12 3 4

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