Datasheet > 2SC3356W

2SC3356W

更新时间： 2024-11-01 04:25:59

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		晶体晶体管
页数	文件大小	规格书
4页	165K
描述
Silicon Epitaxial Planar Transistor

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中文翻译

获取价格

数据手册

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2SC3356W 数据手册

BL Galaxy Electrical

Production specification

Silicon Epitaxial Planar Transistor

2SC3356W

FEATURES

Low noise and high gain: NF=1.1dB TYP,

G_a=11dB TYP. @V_CE=10V,I_C=7mA,f=1.0GHz

High power gain:MAG=13dB TYP.

Lead-free

@V_CE=10V.I_C=20mA,f=1.0GHz

APPLICATIONS

NPN Silicon Epitaxial Planar Transistor.

SOT-323

ORDERING INFORMATION

Type No.

Marking

R23/R24/R25

Package Code

SOT-323

2SC3356W

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

Symbol

Parameter

Value

Units

Collector-Base Voltage

V_CBO

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current -Continuous

Collector Dissipation

100

200

-55~150

℃

P_C

Junction and Storage Temperature

T_j,T_stg

Document number: BL/SSSTF001

Rev.A

www.galaxycn.com

12 3 4

中文翻译

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