Datasheet > 2SC3357

2SC3357

更新时间： 2024-11-20 17:15:39

品牌	Logo	应用领域
浩畅 - HC		/
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描述
SOT-89

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数据手册

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2SC3357 数据手册

SHENZHEN HAOCHANG SEMICONDUCTOR CO.,LTD.

SOT-89 Plastic-Encapsulate Transistors

NPN Transistors

2SC3357

1.70 0.1

■ Features

● Low noise and high gain

● High power gain

● Large P^tot

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Symbol

Rating

Unit

VCBO

VCEO

VEBO

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction to Ambient Resistance

Junction Temperature

100

1.2

th (j-a)

62.5

150

℃/W

℃

Storage Temperature Range

stg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

VCBO

VCEO

VEBO

Ic= 100 μA， I

Ic= 1 mA， I = 0

= 100μA， I = 0

CB= 20V , I = 0

EB= 3V , I =0

E= 0

CBO

EBO

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain (Note.1)

Insertion Power Gain

CE(sat)

BE(sat)

=50 mA, I

^CE= 10V, I

=5mA

0.4

1.2

250

B=5mA

hFE

= 20mA

|S21e

CE = 10V, I

= 20mA, f= 1GHz

= 7mA, f= 1GHz

= 40mA, f= 1GHz

1.1

1.8

Noise Figure

Reverse Transfer Capacitance

Transition frequency

Cre

^CB= 10V, I

^CE= 10V, I

= 0,f=1MHz

= 20mA

6.5

GHz

Note.1: Pulse measurement: PW ≤ 350 us, Duty Cycle ≤ 2%

■ Classification of hfe

Type

Range

Marking

2SC3357-H

50-100

2SC3357-F

80-160

2SC3357-E

125-250

浩畅半导体

RevK：M ay2014

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