Datasheet > 2SA2184(TE16L1,NQ)

2SA2184(TE16L1,NQ)

更新时间： 2024-11-14 14:46:19

品牌	Logo	应用领域
东芝 - TOSHIBA		开关晶体管
页数	文件大小	规格书
5页	259K
描述
Small Signal Bipolar Transistor

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技术参数
数据手册

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2SA2184(TE16L1,NQ) 技术参数

生命周期：	Active	包装说明：	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code：	unknown	风险等级：	5.76
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	1 A
集电极-发射极最大电压：	550 V	配置：	SINGLE
最小直流电流增益 (hFE)：	5	JESD-30 代码：	R-PSSO-G2
元件数量：	1	端子数量：	2
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	PNP	功耗环境最大值：	1 W
最大功率耗散 (Abs)：	20 W	表面贴装：	YES
端子形式：	GULL WING	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	27 MHz	VCEsat-Max：	0.7 V
Base Number Matches：	1

2SA2184(TE16L1,NQ) 数据手册

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2SA2184

TOSHIBA Transistor Silicon PNP Triple Diffused Type

2SA2184

High Voltage Switching Applications

Unit: mm

•

High voltage: V

= -550 V

CEO

High speed: t = 40 ns (typ.) (I = -0.5 A)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

-550

Collector-emitter voltage

Emitter-base voltage

-550

-7

-1

Collector current

Base current

Pulse

-2

-1

Ta = 25°C

Tc = 25°C

Collector power

dissipation

JEDEC

JEITA

―

Junction temperature

150

°C

Storage temperature range

-55 to 150

stg

TOSHIBA

2-7J1A

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

Weight: 0.36 g (typ.)

reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Start of commercial production

2005-09

2017-01-06

12 3 4 5

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