Datasheet > 2SA2193

2SA2193

更新时间： 2024-01-04 21:49:25

品牌	Logo	应用领域
谏早电子 - ISAHAYA		/
页数	文件大小	规格书
2页	56K
描述
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

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技术参数
数据手册

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2SA2193 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SA2193 数据手册

〈SMALL-SIGNAL TRANSISTOR〉

2SA2193

FOR LOW FREQUENCY AMPLIFY APPLICATION

SILICON NPN EPITAXIAL TYPE

DESCRIPTION

ISAHAYA 2SA2193 is a super mini package resin sealed

silicon PNP epitaxial transistor designed for low frequency

voltage amplify application.

OUTLINE DRAWING

Unit:mm

2.1

0.425

1.25

1.30

0.65

0.3

FEATURE

2.0

・Low collector to emitter saturation voltage

VCE(sat)=-0.4V max(@IC=-50mA,IB=-5mA)

0.65

・Excellent linearity of DC forward current gain

・Small packege for easy mounting

0.15

0.9

0.7

0～0.1

APPLICATION

For small type machine low frequency voltage amplify

application

TERMINAL CONNECTOR

: BASE

JEITA : SC-70

JEDEC : -

: EMITTER

: COLLECTOR

MAXIMUM RATINGS (Ta=25℃)

Parameter

Ratings

Symbol

Unit

VCBO

VCEO

VEBO

I C

-60

-40

Collector to Base voltage

MARKING

Collector to Emitter voltage

Emitter to Base voltage

Collector current

-6.0

-200

℃

2 W

150

Collector dissipation

+150

Junction temperature

Storage temprature

hFE ITEM

TYPE NAME

Tstg

-55 ～ +150

ELECTRICAL CHARACTERISTICS (Ta=25℃)

Limits

Symbol

Parameter

Test conditions

Unit

Typ

Min

Max

V(BR)CEO

I CBO

I EBO

C to E break down voltage

Collector cut off current

Emitter cut off current

DC forward current gain

IC=-1mA, RBE=∞

-40

VCB=-60V, IE=0mA

VEB=-6V, IC=0mA

-0.1

300

μA

hFE

VCE=-1V, IC=-10mA

IC=-50mA, IB=-5mA

VCE=-20V, IE=10mA

VCB=-5V, IE=0mA, f=1MHz

100

250

MHz

VCE(sat) C to E saturation voltage

-400

Gain bandwidth product

Cob

Collector output capacitance

5.0

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