5秒后页面跳转
2SA2203 PDF预览

2SA2203

更新时间: 2024-11-11 03:56:27
品牌 Logo 应用领域
三洋 - SANYO 晶体开关晶体管
页数 文件大小 规格书
4页 40K
描述
PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

2SA2203 数据手册

 浏览型号2SA2203的Datasheet PDF文件第2页浏览型号2SA2203的Datasheet PDF文件第3页浏览型号2SA2203的Datasheet PDF文件第4页 
Ordering number : ENA0542  
SANYO Sem iconductors  
DATA S HEET  
PNP Epitaxial Planar Silicon Transistor  
2SA2203  
High-Current Switching Applications  
Applications  
DC / DC converter, Relay drivers, lamp drivers, motor drivers.  
Features  
Adoption of FBET, MBIT processes.  
Large current capacitance.  
Low collector-to-emitter saturation voltage.  
High-speed switching.  
High allowable power dissipation.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
--60  
--60  
--60  
-- 7  
CBO  
V
V
CES  
CEO  
EBO  
V
V
V
V
I
-- 3  
A
C
Collector Current (Pulse)  
Base Current  
I
-- 5  
A
CP  
I
B
--600  
0.8  
15  
mA  
W
W
°C  
°C  
Collector Dissipation  
P
C
Tc=25°C  
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
150  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
=--50V, I =0A  
Unit  
min  
max  
--1  
I
V
CB  
V
EB  
V
CE  
V
CE  
V
CB  
µA  
µA  
CBO  
E
Emitter Cutoff Current  
DC Current Gain  
I
=--4V, I =0A  
--1  
EBO  
C
h
FE  
=--2V, I =--100mA  
200  
400  
C
Gain-Bandwidth Product  
Output Capacitance  
f
T
=--10V, I =--500mA  
C
400  
25  
MHz  
pF  
Cob  
=--10V, f=1MHz  
Continued on next page.  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
N0806EA SY IM TC-00000305 No. A0542-1/4  

与2SA2203相关器件

型号 品牌 获取价格 描述 数据表
2SA2204 SANYO

获取价格

PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications
2SA2204(TP) ONSEMI

获取价格

TRANSISTOR,BJT,PNP,80V V(BR)CEO,2.5A I(C),TO-251VAR
2SA2204-TL ONSEMI

获取价格

Small Signal Bipolar Transistor, 2.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TP-FA,
2SA2205 SANYO

获取价格

PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications
2SA2205 ONSEMI

获取价格

Bipolar Transistor -100V, -2A, Low VCE(sat), PNP Single TP/TP-FA
2SA2205(TP) ONSEMI

获取价格

TRANSISTOR,BJT,PNP,100V V(BR)CEO,2A I(C),TO-251VAR
2SA2205-E ONSEMI

获取价格

Bipolar Transistor -100V, -2A, Low VCE(sat), PNP Single TP/TP-FA
2SA2205-TL-E ONSEMI

获取价格

Bipolar Transistor -100V, -2A, Low VCE(sat), PNP Single TP/TP-FA
2SA2206 TOSHIBA

获取价格

PNP Bipolar Transistor, -80 V, -2 A, PW-Mini
2SA2206(TE12L) TOSHIBA

获取价格

TRANSISTOR,BJT,PNP,80V V(BR)CEO,2A I(C),SC-62