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2SA2215 PDF预览

2SA2215

更新时间: 2023-12-06 20:13:10
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
4页 137K
描述
PNP Bipolar Transistor, -20 V, -2.5 A, SOT-323F(UFM)

2SA2215 数据手册

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2SA2215  
TOSHIBA Transistor Silicon PNP Epitaxial Type  
2SA2215  
High-Speed Switching Applications  
Unit: mm  
DC-DC Converter Applications  
Strobe Applications  
2.1±0.1  
1.7±0.1  
High DC current gain: h  
= 200 to 500 (I = 0.5 A)  
FE C  
Low collector-emitter saturation voltage: V  
= 0.19 V (max)  
CE (sat)  
1
2
High-speed switching: t = 40 ns (typ.)  
f
3
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
20  
20  
7  
V
V
V
Collector-emitter voltage  
Emitter-base voltage  
1 :Base  
2 :Emitter  
3 :Collector  
DC  
I
2.5  
4.0  
250  
800  
C
Collector current  
A
UFM  
Pulse  
I
CP  
Base current  
I
mA  
mW  
B
JEDEC  
JEITA  
P
P
(Note 1)  
(Note 2)  
C
C
Collector power dissipation  
500  
150  
TOSHIBA  
2-2U1A  
Junction temperature  
T
°C  
°C  
j
Weight: 6.6 mg (typ.)  
Storage temperature range  
T
stg  
55 to 150  
Note 1: Mounted on ceramic board.(25.4mm × 25.4mm × 0.8mmt, Cu Pad: 645 mm2 )  
Note 2: Mounted on FR4 board.(25.4mm × 25.4mm × 1.6mmt, Cu Pad: 645 mm2 )  
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Start of commercial production  
2007-08  
1
2014-03-01  

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