Datasheet > 2SA2206

2SA2206

更新时间： 2024-10-31 14:53:35

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	309K
描述
PNP Bipolar Transistor, -80 V, -2 A, PW-Mini

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2SA2206 数据手册

2SA2206

TOSHIBA Transistor Silicon PNP Epitaxial Type

2SA2206

Power Amplifier Applications

Unit: mm

Power Switching Applications

Low collector emitter saturation voltage

: V

= -0.5 V (max) (I = -1A)

CE (sat)

High-speed switching: t = 300 ns (typ.)

stg

Complementary to 2SC6124

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

-80

Collector-emitter voltage

Emitter-base voltage

-80

-7

1: BASE

2: COLLECTOR (HEAT SINK)

3: EMITTER

-2

Collector current

(Note 1)

Pulse

-4

-0.5

JEDEC

―

Base current

JEITA

SC-62

2-5K1A

t = 10 s

2.5

Collector power dissipation

(Note 2)

TOSHIBA

Junction temperature

150

°C

Weight: 0.05 g (typ.)

Storage temperature range

stg

−55 to 150

Note 1: Ensure that the junction temperature does not exceed 150°C during use of the device.

Note 2: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm²)

Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

2007-03

2018-01-09

12 3 4 5

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