Datasheet > 2SA2214

2SA2214

更新时间： 2024-01-05 16:25:10

品牌	Logo	应用领域
东芝 - TOSHIBA		开关光电二极管晶体管
页数	文件大小	规格书
4页	122K
描述
TRANSISTOR 1500 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, UFM, 2-2U1A, 3 PIN, BIP General Purpose Small Signal

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技术参数
数据手册

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2SA2214 技术参数

生命周期：	End Of Life	包装说明：	SMALL OUTLINE, R-PDSO-F3
针数：	3	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.78
最大集电极电流 (IC)：	1.5 A	集电极-发射极最大电压：	20 V
配置：	SINGLE	最小直流电流增益 (hFE)：	125
JESD-30 代码：	R-PDSO-F3	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	PNP
认证状态：	Not Qualified	表面贴装：	YES
端子形式：	FLAT	端子位置：	DUAL
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

2SA2214 数据手册

2SA2214

TOSHIBA Transistor Silicon PNP Epitaxial Type

2SA2214

High-Speed Switching Applications

Unit: mm

DC-DC Converter Applications

Strobe Applications

2.1±0.1

1.7±0.1

•

High DC current gain: h

= 200 to 500 (I = −1.5 A)

FE C

Low collector-emitter saturation voltage: V

= −0.14 V (max)

CE (sat)

High-speed switching: t = 37 ns (typ.)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−20

−7

Collector-emitter voltage

Emitter-base voltage

1 :Base

2 :Emitter

3 :Collector

−1.5

−2.5

−150

800

Collector current

UFM

Pulse

Base current

JEDEC

JEITA

―

(Note 1)

(Note 2)

Collector power dissipation

500

150

TOSHIBA

2-2U1A

Junction temperature

°C

Weight: 6.6 mg (typ.)

Storage temperature range

stg

−55 to 150

Note 1: Mounted on ceramic board.(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm²)

Note 2: Mounted on FR4 board.(25.4 mm × 25.4 mm × 1.6mm, Cu Pad: 645 mm²)

Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute

maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2009-04-21

12 3 4

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