Datasheet > 2SA2220

2SA2220

更新时间： 2024-11-01 06:19:31

品牌	Logo	应用领域
东芝 - TOSHIBA		晶体晶体管
页数	文件大小	规格书
5页	167K
描述
Transistor Silicon PNP Epitaxial Type

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2SA2220 数据手册

2SA2220

TOSHIBA Transistor Silicon PNP Epitaxial Type

2SA2220

○Audio Frequency Amplifier Applications

Unit: mm

•

High collector voltage

: V

= －160 V

CEO

Small collector output capacitance : C_ob= 17 pF (typ.)

High transition frequency

: f_T= 100 MHz (typ.)

Complementary to 2SC6140

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

-160

-6

Collector-emitter voltage

Emitter-base voltage

-1.5

Collector current

Pulse

-2.5

Base current

-0.5

Collector power dissipation

Junction temperature

Storage temperature range

1.8

°C

JEDEC

JEITA

⎯

150

stg

−55 to 150

TOSHIBA

2-10T1A

Note 1: Ensure that the channel temperature does not exceed 150°C

during use of the device.

Weight: 1.5 g (typ.)

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

2009-10-15

12 3 4 5

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