2SA2188
PRELIMINARY
Notice : This is not a final specification
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
Some parametric limits are subject to change.
SILICON PNP EPITAXIAL TYPE
Unit:mm
OUTLINE DRAWING
DESCRIPTION
2.5
1.5
ISAHAYA 2SA2188 is a silicon PNP epitaxial type transistor
designed with high collector current, low VCE(sat).
0.5
0.5
①
FEATURE
③
●High collector current
IC(MAX)=-650mA
②
●Low collector to emitter saturation voltage
V
CE(sat)<-0.7Vmax
APPLICATION
Notice: The dimension without
For switching application, small type motor drive application.
tolerance represent central
value.
TERMINAL CONNECTOR
①:BASE
EIAJ:SC-59
②:EMITTER
③:COLLECTOR
JEDEC:TO-236
Resemblance
MAXIMUM RATINGS(Ta=25℃)
記 号
VCEO
VCBO
VEBO
ICM
項
目
定 格 値
-20
単 位
V
Collector to Emitter voltage
Collector to Base voltage
Emitter to Base voltage
Peak collector current
Collector current
MARKING
-25
V
-4
V
hFE ITEM
Type Name
-1000
-650
mA
mA
mW
℃
IC
F
A
・
PC
Collector dissipation
200
Tj
Junction temperature
Storage temperature
150
Tstg
-55~150
℃
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Limits
Typ
Symbol
Parameter
Test condition
Unit
Min
-20
-25
-4
Max
V(BR)CEO C to E break down voltage
V(BR)CBO C to B break down voltage
V(BR)EBO E to B break down voltage
IC=-100uA、IB=0
V
V
IC=-10uA、IE=0
IE=-10uA、IC=0
V
ICBO
IEBO
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Gain band width product
VCB=-25V、IE=0
-1
-1
uA
uA
---
V
VEB=-2V、IC=0
hFE*
VCE(sat)
fT
IC=-100mA、VCE=-4V
IC=-500mA、IB=-25mA
IE=10mA、VCE=-6V、f=100MHz
150
800
-0.7
-0.3
210
MHz
*:It shows hFE classification in below table.
Marking
hFE
・AE
・AF
・AG
150~300 250~500 400~800
ISAHAYA ELECTRONICS CORPORATION