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2SA2188F PDF预览

2SA2188F

更新时间: 2024-11-14 21:05:07
品牌 Logo 应用领域
谏早电子 - ISAHAYA /
页数 文件大小 规格书
4页 127K
描述
Transistor

2SA2188F 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

2SA2188F 数据手册

 浏览型号2SA2188F的Datasheet PDF文件第2页浏览型号2SA2188F的Datasheet PDF文件第3页浏览型号2SA2188F的Datasheet PDF文件第4页 
2SA2188  
PRELIMINARY  
Notice : This is not a final specification  
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION  
Some parametric limits are subject to change.  
SILICON PNP EPITAXIAL TYPE  
Unit:mm  
OUTLINE DRAWING  
DESCRIPTION  
2.5  
1.5  
ISAHAYA 2SA2188 is a silicon PNP epitaxial type transistor  
designed with high collector current, low VCE(sat).  
0.5  
0.5  
FEATURE  
●High collector current  
IC(MAX)=-650mA  
●Low collector to emitter saturation voltage  
V
CE(sat)<-0.7Vmax  
APPLICATION  
Notice: The dimension without  
For switching application, small type motor drive application.  
tolerance represent central  
value.  
TERMINAL CONNECTOR  
①:BASE  
EIAJ:SC-59  
②:EMITTER  
③:COLLECTOR  
JEDEC:TO-236  
Resemblance  
MAXIMUM RATINGS(Ta=25℃)  
記 号  
VCEO  
VCBO  
VEBO  
ICM  
定 格 値  
-20  
単 位  
V
Collector to Emitter voltage  
Collector to Base voltage  
Emitter to Base voltage  
Peak collector current  
Collector current  
MARKING  
-25  
V
-4  
V
hFE ITEM  
Type Name  
-1000  
-650  
mA  
mA  
mW  
IC  
F
A
PC  
Collector dissipation  
200  
Tj  
Junction temperature  
Storage temperature  
150  
Tstg  
-55~150  
ELECTRICAL CHARACTERISTICS(Ta=25℃)  
Limits  
Typ  
Symbol  
Parameter  
Test condition  
Unit  
Min  
-20  
-25  
-4  
Max  
V(BR)CEO C to E break down voltage  
V(BR)CBO C to B break down voltage  
V(BR)EBO E to B break down voltage  
IC=-100uA、IB=0  
V
V
IC=-10uA、IE=0  
IE=-10uA、IC=0  
V
ICBO  
IEBO  
Collector cut off current  
Emitter cut off current  
DC forward current gain  
C to E saturation voltage  
Gain band width product  
VCB=-25V、IE=0  
-1  
-1  
uA  
uA  
---  
V
VEB=-2V、IC=0  
hFE*  
VCE(sat)  
fT  
IC=-100mA、VCE=-4V  
IC=-500mA、IB=-25mA  
IE=10mA、VCE=-6V、f=100MHz  
150  
800  
-0.7  
-0.3  
210  
MHz  
*:It shows hFE classification in below table.  
Marking  
hFE  
・AE  
・AF  
・AG  
150~300 250~500 400~800  
ISAHAYA ELECTRONICS CORPORATION  

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