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2SA2190 PDF预览

2SA2190

更新时间: 2024-02-13 02:45:20
品牌 Logo 应用领域
东芝 - TOSHIBA 局域网放大器晶体管
页数 文件大小 规格书
5页 201K
描述
TRANSISTOR 2 A, 180 V, PNP, Si, POWER TRANSISTOR, LEAD FREE, 2-10U1A, SC-67, 3 PIN, BIP General Purpose Power

2SA2190 技术参数

生命周期:ActiveReach Compliance Code:unknown
风险等级:5.82

2SA2190 数据手册

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2SA2190  
TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor Type  
2SA2190  
Unit: mm  
Power Amplifier Applications  
Driver Stage Amplifier Applications  
High transition frequency: f = 200 MHz (typ.)  
T
Absolute Maximum Ratings (Tc = 25°C)  
Characteristic  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
180  
180  
5  
V
V
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
I
2.0  
1.0  
2.0  
A
C
1 : BASE  
2 : COLLECTOR  
3 : EMITTER  
Base current  
I
A
B
Ta = 25°C  
Tc = 25°C  
W
W
°C  
°C  
Collector power dissipation  
P
C
JEDEC  
JEITA  
20  
SC-67  
Junction temperature  
T
j
150  
TOSHIBA  
2-10U1A  
Storage temperature range  
T
stg  
55~150  
Weight: 1.7 g (typ.)  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
Electrical Characteristics (Tc = 25°C)  
Characteristic  
Collector cut-off current  
Symbol  
Test Conditions  
= − 180 V, I = 0  
Min  
Typ.  
Max  
Unit  
I
V
V
5.0  
5.0  
μA  
μA  
V
CBO  
CB  
EB  
E
Emitter cut-off current  
I
= − 5 V, I = 0  
C
EBO  
(BR) CEO  
Collector-emitter breakdown voltage  
V
I
= − 10 mA, I = 0  
180  
100  
50  
C
B
h
FE  
h
FE  
(1)  
(2)  
V
V
= − 5 V, I = − 0.1 A  
320  
CE  
CE  
C
DC current gain  
= − 5 V, I = − 1 A  
C
Collector-emitter saturation voltage  
Base-emitter voltage  
V
I
= − 1 A, I = − 0.1 A  
0.24  
1.0  
1.5  
V
V
CE (sat)  
C
B
V
V
V
V
= − 5 V, I = − 1 A  
BE  
CE  
CE  
CB  
C
Transition frequency  
f
= − 5 V, I = − 0.3 A  
200  
26  
MH  
Z
T
C
Collector output capacitance  
C
= − 10 V, I = 0, f = 1MH  
Z
pF  
ob  
E
1
2007-06-07  

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