2SA2190
TOSHIBA Multi-chip Device Silicon PNP Epitaxial Transistor Type
2SA2190
Unit: mm
Power Amplifier Applications
Driver Stage Amplifier Applications
・High transition frequency: f = 200 MHz (typ.)
T
Absolute Maximum Ratings (Tc = 25°C)
Characteristic
Collector-base voltage
Symbol
Rating
Unit
V
CBO
V
CEO
V
EBO
− 180
− 180
− 5
V
V
Collector-emitter voltage
Emitter-base voltage
Collector current
V
I
− 2.0
− 1.0
2.0
A
C
1 : BASE
2 : COLLECTOR
3 : EMITTER
Base current
I
A
B
Ta = 25°C
Tc = 25°C
W
W
°C
°C
Collector power dissipation
P
C
JEDEC
JEITA
―
20
SC-67
Junction temperature
T
j
150
TOSHIBA
2-10U1A
Storage temperature range
T
stg
− 55~150
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Electrical Characteristics (Tc = 25°C)
Characteristic
Collector cut-off current
Symbol
Test Conditions
= − 180 V, I = 0
Min
Typ.
Max
Unit
I
V
V
⎯
⎯
⎯
⎯
− 5.0
− 5.0
⎯
μA
μA
V
CBO
CB
EB
E
Emitter cut-off current
I
= − 5 V, I = 0
C
EBO
(BR) CEO
Collector-emitter breakdown voltage
V
I
= − 10 mA, I = 0
− 180
100
50
⎯
C
B
h
FE
h
FE
(1)
(2)
V
V
= − 5 V, I = − 0.1 A
⎯
320
⎯
CE
CE
C
DC current gain
= − 5 V, I = − 1 A
⎯
C
Collector-emitter saturation voltage
Base-emitter voltage
V
I
= − 1 A, I = − 0.1 A
⎯
− 0.24
⎯
−1.0
− 1.5
⎯
V
V
CE (sat)
C
B
V
V
V
V
= − 5 V, I = − 1 A
⎯
BE
CE
CE
CB
C
Transition frequency
f
= − 5 V, I = − 0.3 A
⎯
200
26
MH
Z
T
C
Collector output capacitance
C
= − 10 V, I = 0, f = 1MH
Z
⎯
⎯
pF
ob
E
1
2007-06-07