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2SA2192

更新时间： 2024-02-03 13:15:36
品牌 Logo 应用领域
三洋 - SANYO 晶体开关晶体管
页数 文件大小 规格书
4页 40K
描述
PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

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2SA2192 技术参数

生命周期：ActiveReach Compliance Code：compliant
风险等级：5.61最大集电极电流 (IC)：10 A
配置：Single最小直流电流增益 (hFE)：200
最高工作温度：150 °C极性/信道类型：PNP
最大功率耗散 (Abs)：20 W子类别：Other Transistors
表面贴装：YESBase Number Matches：1

2SA2192 数据手册

 浏览型号2SA2192的Datasheet PDF文件第2页浏览型号2SA2192的Datasheet PDF文件第3页浏览型号2SA2192的Datasheet PDF文件第4页 
Ordering number : ENA0307  
SANYO Sem iconductors  
DATA S HEET  
PNP Epitaxial Planar Silicon Transistor  
2SA2192  
High-Current Switching Applications  
Applications  
•
Relay drivers, lamp drivers, motor drivers.  
Features  
• Adoption of MBIT process.  
•
Large current capacitance.  
• Low collector-to-emitter saturation voltage.  
• High-speed switching.  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Collector-to-Base Voltage  
Collector-to-Emitter Voltage  
Collector-to-Emitter Voltage  
Emitter-to-Base Voltage  
Collector Current  
Symbol  
Conditions  
Ratings  
Unit  
V
V
--50  
--50  
--50  
-- 8  
CBO  
V
V
CES  
CEO  
EBO  
V
V
V
V
I
--10  
--13  
-- 2  
A
C
Collector Current (Pulse)  
Base Current  
I
PW≤100µs  
Tc=25°C  
A
CP  
I
B
A
0.95  
20  
W
W
°C  
°C  
Collector Dissipation  
P
C
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
150  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Collector Cutoff Current  
Symbol  
Conditions  
=--40V, I =0A  
Unit  
min  
max  
--10  
--10  
560  
I
V
V
V
V
V
µA  
µA  
CBO  
CB  
EB  
CE  
CE  
CB  
E
Emitter Cutoff Current  
I
=--4V, I =0A  
C
EBO  
DC Current Gain  
h
FE  
=--2V, I =--1A  
200  
C
Gain-Bandwidth Product  
Output Capacitance  
f
=--5V, I =--1A  
C
130  
MHz  
pF  
T
Cob  
=--10V, f=1MHz  
90  
--290  
--0.93  
Collector-to-Emitter Saturation Voltage  
Base-to-Emitterr Saturation Voltage  
V
V
(sat)  
I
C
C
=--5A, I =--250mA  
--580  
-- 1.4  
mV  
V
CE  
B
(sat)  
I
=--5A, I =--250mA  
BE  
B
Continued on next page.  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
71206 / 42506EA MS IM TB-00002245 No. A0307-1/4  
1234

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