Datasheet > 2SA2188E

2SA2188E

更新时间： 2024-01-20 06:45:20

品牌	Logo	应用领域
谏早电子 - ISAHAYA		/
页数	文件大小	规格书
4页	127K
描述
Transistor

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2SA2188E 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

2SA2188E 数据手册

2SA2188

PRELIMINARY

Notice : This is not a final specification

FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION

Some parametric limits are subject to change.

SILICON PNP EPITAXIAL TYPE

Unit：mm

OUTLINE DRAWING

DESCRIPTION

2.5

1.5

ISAHAYA 2SA2188 is a silicon PNP epitaxial type transistor

designed with high collector current, low V_CE（sat）.

0.5

①

FEATURE

③

●High collector current

I_C（MAX）=-650mA

②

●Low collector to emitter saturation voltage

_CE（sat）<-0.7V_max

APPLICATION

Notice: The dimension without

For switching application, small type motor drive application.

tolerance represent central

value.

TERMINAL CONNECTOR

①：BASE

EIAJ：SC-59

②：EMITTER

③：COLLECTOR

JEDEC：TO-236

Resemblance

MAXIMUM RATINGS（Ta=25℃）

記号

V_CEO

V_CBO

V_EBO

I_CM

項

目

定格値

-20

単位

Collector to Emitter voltage

Collector to Base voltage

Emitter to Base voltage

Peak collector current

Collector current

MARKING

-25

-4

hFE ITEM

Type Name

-1000

-650

℃

I_C

・

P_C

Collector dissipation

200

T_j

Junction temperature

Storage temperature

150

T_stg

-55～150

℃

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Typ

Symbol

Parameter

Test condition

Unit

Min

-20

-25

-4

Max

V_（BR）CEOC to E break down voltage

V_（BR）CBOC to B break down voltage

V_（BR）EBOE to B break down voltage

IC=-100uA、IB=0

IC=-10uA、IE=0

IE=-10uA、IC=0

I_CBO

I_EBO

Collector cut off current

Emitter cut off current

DC forward current gain

C to E saturation voltage

Gain band width product

VCB=-25V、IE=0

-1

---

VEB=-2V、IC=0

h_FE*

V_CE（sat）

f_T

IC=-100mA、VCE=-4V

IC=-500mA、IB=-25mA

IE=10mA、VCE=-6V、f=100MHz

150

800

-0.7

-0.3

210

MHz

*：It shows hFE classification in below table.

Marking

hFE

・AE

・AF

・AG

150～300 250～500 400～800

ISAHAYA ELECTRONICS CORPORATION

12 3 4

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