2SA2195
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2195
High-Speed Switching Applications
Unit: mm
DC-DC Converter Applications
Strobe Applications
2.1±0.1
1.7±0.1
•
•
•
High DC current gain: h
= 200 to 500 (I = −0.5 A)
FE C
1
2
Low collector-emitter saturation voltage: V
= −0.2 V (max)
CE (sat)
High-speed switching: t = 90 ns (typ.)
f
3
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Symbol
Rating
Unit
V
CBO
V
CEO
V
EBO
−50
−50
−7
V
V
V
Collector-emitter voltage
Emitter-base voltage
1 :Base
2 :Emitter
3 :Collector
DC
I
−1.7
−3.5
−200
800
C
Collector current
Base current
A
UFM
Pulse
I
CP
I
mA
mW
B
JEDEC
JEITA
―
―
(Note 1)
(Note 2)
Collector power
dissipation
PC
500
150
TOSHIBA
2-2U1A
Junction temperature
T
°C
°C
j
Weight: 6.6 mg (typ.)
Storage temperature range
T
stg
−55 to 150
Note 1: Mounted on ceramic board.(25.4mm × 25.4mm × 0.8mmt, Cu Pad: 645 mm2 )
Note 2: Mounted on FR4 board.(25.4mm × 25.4mm × 1.6mmt, Cu Pad: 645 mm2 )
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-04-22