Datasheet > 2SA2154MFV-Y,L3F(B

2SA2154MFV-Y,L3F(B

更新时间： 2024-09-26 15:25:07

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
4页	165K
描述
Small Signal Bipolar Transistor

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2SA2154MFV-Y,L3F(B 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.65
Base Number Matches：	1

2SA2154MFV-Y,L3F(B 数据手册

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2SA2154MFV

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

2SA2154MFV

General-Purpose Amplifier Applications

Unit: mm

1.2 ± 0.05

• High voltage and high current

: V_CEO= −50 V, I_C= −150 mA (max)

• Excellent h linearity

0.80 ± 0.05

: h (I = −0.1 mA)/h (I = −2 mA) = 0.95 (typ.)

• High h

h = 120 to 400

: FE

• Complementary to 2SC6026MFV

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−50

Collector-emitter voltage

Emitter-base voltage

Collector current

1.BASE

2.EMITTER

3.COLLECTOR

−5

VESM

−150

−30

°C

Base current

JEDEC

JEITA

―

Collector power dissipation

Junction temperature

Storage temperature range

150*

150

TOSHIBA

2-1L1A

stg

−55 to 150

Weight: 1.5 mg (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions

(i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

* : Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6mm)

Mount Pad Dimensions (Reference)

0.5

0.45

1.15

0.4

0.45

0.4

Unit: mm

Start of commercial production

2005-02

2014-03-01

12 3 4

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