Datasheet > 2SA2166_08

2SA2166_08

更新时间： 2025-07-28 05:57:47

品牌	Logo	应用领域
谏早电子 - ISAHAYA		驱动
页数	文件大小	规格书
4页	110K
描述
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

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2SA2166_08 数据手册

2SA2166

FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION

SILICON PNP EPITAXIAL TYPE

Unit：mm

OUTLINE DRAWING

DESCRIPTION

2.5

1.5

ISAHAYA 2SA2166 is a silicon PNP epitaxial type transistor

designed with high collector current, low V_CE（sat）.

0.5

①

FEATURE

③

●High collector current

I_C（MAX）=-500mA

②

●Low collector to emitter saturation voltage

_CE（sat）<-0.4V_max(IC=-150mA、IB=-15mA）

APPLICATION

Notice: The dimension without

For switching application, small type motor drive application.

tolerance represent central

value.

TERMINAL CONNECTOR

①：BASE

EIAJ：SC-59

②：EMITTER

③：COLLECTOR

JEDEC：TO-236

Resemblance

MAXIMUM RATINGS（Ta=25℃）

記号

V_CEO

V_CBO

V_EBO

I_C

項

目

定格値

-60

単位

MARKING

Collector to Emitter voltage

Collector to Base voltage

Emitter to Base voltage

Collector current

Type Name

-60

-5

-500

200

℃

・

A W

P_C

Collector dissipation

T_j

Junction temperature

Storage temperature

150

T_stg

-55～150

℃

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Typ

Symbol

Parameter

Test condition

Unit

Min

-60

-5

Max

V_（BR）CEOC to E break down voltage

V_（BR）CBOC to B break down voltage

V_（BR）EBOE to B break down voltage

IC=-1mA、IB=0

IC=-10uA、IE=0

IE=-10uA、IC=0

I_CBO

I_EBO

Collector cut off current

Emitter cut off current

DC forward current gain

C to E saturation voltage

B to E saturation voltage

Gain band width product

Collector output capacitance

VCB=-50V、IE=0

-100

300

---

VEB=-3V、IC=0

h_FE

IC=-150mA、VCE=-10V

IC=-150mA、IB=-15mA

100

V_CE（sat）

V_BE（sat）

f_T

-0.4

-1.3

IE=50mA、VCE=-20V、f=100MHz

VCB=-10V、f=1MHz

200

MHz

C_ob

ISAHAYA ELECTRONICS CORPORATION

12 3 4

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