2SA2166
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
Unit:mm
OUTLINE DRAWING
DESCRIPTION
2.5
1.5
ISAHAYA 2SA2166 is a silicon PNP epitaxial type transistor
designed with high collector current, low VCE(sat).
0.5
0.5
①
FEATURE
③
●High collector current
IC(MAX)=-500mA
②
●Low collector to emitter saturation voltage
V
CE(sat)<-0.4Vmax(IC=-150mA、IB=-15mA)
APPLICATION
Notice: The dimension without
For switching application, small type motor drive application.
tolerance represent central
value.
TERMINAL CONNECTOR
①:BASE
EIAJ:SC-59
②:EMITTER
③:COLLECTOR
JEDEC:TO-236
Resemblance
MAXIMUM RATINGS(Ta=25℃)
記 号
VCEO
VCBO
VEBO
IC
項
目
定 格 値
-60
単 位
V
MARKING
Collector to Emitter voltage
Collector to Base voltage
Emitter to Base voltage
Collector current
Type Name
-60
V
-5
V
-500
200
mA
mW
℃
・
A W
PC
Collector dissipation
Tj
Junction temperature
Storage temperature
150
Tstg
-55~150
℃
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Limits
Typ
Symbol
Parameter
Test condition
Unit
Min
-60
-60
-5
Max
V(BR)CEO C to E break down voltage
V(BR)CBO C to B break down voltage
V(BR)EBO E to B break down voltage
IC=-1mA、IB=0
V
V
IC=-10uA、IE=0
IE=-10uA、IC=0
V
ICBO
IEBO
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
B to E saturation voltage
Gain band width product
Collector output capacitance
VCB=-50V、IE=0
-100
-100
300
nA
nA
---
V
VEB=-3V、IC=0
hFE
IC=-150mA、VCE=-10V
IC=-150mA、IB=-15mA
IC=-150mA、IB=-15mA
100
VCE(sat)
VBE(sat)
fT
-0.4
-1.3
V
IE=50mA、VCE=-20V、f=100MHz
VCB=-10V、f=1MHz
200
MHz
pF
Cob
8
ISAHAYA ELECTRONICS CORPORATION