Datasheet > 2SA2167

2SA2167

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
谏早电子 - ISAHAYA		驱动
页数	文件大小	规格书
3页	97K
描述
FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

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2SA2167 数据手册

2SA2167

FOR HIGH CURRENT DRIVE APPLICATION

SILICON PNP EPITAXIAL TYPE

Unit：mm

OUTLINE DRAWING

DESCRIPTION

4.6MAX

1.6

2SA2167 is a silicon PNP epitaxial type transistor.

It is designed with high voltage, high Collector current,

high Collector dissipation.

1.5

FEATURE

0.53

MAX

●High voltage VCEO=-60V

1.5

0.48MAX

0.4

●High Collector current I^C=-2A

3.0

●Low Collector to Emitter saturation voltage

V^CE（sat）＝0.5VMax （@IC=-1A/IB=-50mA）

●High Collector dissipation PC=500mW

MARKING

マーキング

APPLICATION

TERMINAL CONNECTOR

①：BASE

②：EMITTER

Audiovisual apparatus, VTR, Relay drive

JEITA：SC-62

JEDEC：SOT-89

③：COLLECTOR

MAXIMUM RATINGS（Ta=25℃）

Symbol

VCBO

VEBO

VCEO

Parameter

Ratings

-60

Unit

Collector to Base voltage

Emitter to Base voltage

Collector to Emitter voltage

Collector current

MARKING

-6

-60

TYPE NAME

-2

A L

ICM

Peak Collector current

Collector dissipation

Junction temperature

Storage temperature

-3

500

℃

150

Tstg

-55～150

hFE ITEM

Lot No.

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Symbol

Parameter

Test condition

Unit

Max

Min

-60

-6

Typ

V（BR）CBO Collector to Base brake down voltage

IC=-10uA、IE=0mA

IE=-10uA、IC=0mA

V（BR）EBO

V（BR）CEO

ICBO

Emitter to Base brake down voltage

Collector to Emitter brake down voltage IC=-2mA、RBE=∞

-60

Collector cut off current

VCB=-50V、IE=0mA

VEB=-4V、IC=0mA

-0.2

300

μA

－

IEBO

Emitter cut off current

hFE

DC forward current gain

VCE=-4V、IC=-100mA

IC=-1A、IB=-50mA

VCE（sat）

Collector to Emitter saturation voltage

Gain band width product

-0.2

-0.5

VCE=-2V、IE=10mA

VCB=10V、IE=0mA、f=1MHz

MHz

Cob

Collector output capacitance

MARKING

hFE

55～110

90～180

150～300

ISAHAYA ELECTRONICS CORPORATION

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