Datasheet > 2SA2182

2SA2182

更新时间： 2024-11-14 21:02:35

品牌	Logo	应用领域
东芝 - TOSHIBA		局域网放大器晶体管
页数	文件大小	规格书
5页	185K
描述
TRANSISTOR 1 A, 230 V, PNP, Si, POWER TRANSISTOR, LEAD FREE, SC-67, 2-10U1A, 3 PIN, BIP General Purpose Power

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技术参数
数据手册

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2SA2182 技术参数

生命周期：	Transferred	零件包装代码：	SC-67
包装说明：	LEAD FREE, 2-10U1A, SC-67, 3 PIN	针数：	3
Reach Compliance Code：	unknown	风险等级：	5.46
外壳连接：	ISOLATED	最大集电极电流 (IC)：	1 A
集电极-发射极最大电压：	230 V	配置：	SINGLE
最小直流电流增益 (hFE)：	100	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	PNP	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	80 MHz
Base Number Matches：	1

2SA2182 数据手册

2SA2182

TOSHIBA Transistor Silicon PNP Epitaxial Type

2SA2182

Unit: mm

Power Amplifier Applications

Driver Stage Amplifier Applications

・High transition frequency: f = 80 MHz (typ.)

Absolute Maximum Ratings (Tc = 25°C)

Characteristic

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

− 230

− 5

Collector-emitter voltage

Emitter-base voltage

− 1.0

− 2.0

− 100

Collector current

pulse

1 : BASE

2 : COLLECTOR

3 : EMITTER

Base current

°C

Ta = 25°C

Tc = 25°C

JEDEC

JEITA

―

Collector power dissipation

SC-67

Junction temperature

150

TOSHIBA

2-10U1A

Storage temperature range

stg

− 55~150

Weight: 1.7 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2006-11-13

12 3 4 5

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