生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.5 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 550 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 5 |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
功耗环境最大值: | 1 W | 最大功率耗散 (Abs): | 20 W |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 27 MHz | VCEsat-Max: | 0.7 V |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2SA2184(TE16L1,NQ) | TOSHIBA | Small Signal Bipolar Transistor |
获取价格 |
|
2SA2184(TE16L1,Q) | TOSHIBA | TRANSISTOR,BJT,PNP,550V V(BR)CEO,1A I(C),TO-252AA |
获取价格 |
|
2SA2186 | SANYO | PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications |
获取价格 |
|
2SA2186-AN | ONSEMI | Bipolar Transistor, -50V, -2A, Low VCE(sat), PNP Single NMP |
获取价格 |
|
2SA2188 | ISAHAYA | FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE |
获取价格 |
|
2SA2188E | ISAHAYA | Transistor |
获取价格 |