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2SA2184 PDF预览

2SA2184

更新时间: 2024-01-03 05:30:06
品牌 Logo 应用领域
东芝 - TOSHIBA 开关
页数 文件大小 规格书
5页 213K
描述
High Voltage Switching Applications

2SA2184 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.5外壳连接:COLLECTOR
最大集电极电流 (IC):1 A集电极-发射极最大电压:550 V
配置:SINGLE最小直流电流增益 (hFE):5
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
功耗环境最大值:1 W最大功率耗散 (Abs):20 W
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):27 MHzVCEsat-Max:0.7 V
Base Number Matches:1

2SA2184 数据手册

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2SA2184  
TOSHIBA Transistor Silicon PNP Triple Diffused Type  
2SA2184  
High Voltage Switching Applications  
Unit: mm  
High voltage: V  
= 550 V  
CEO  
High speed: t = 40 ns (typ.) (I = 0.5A)  
f
C
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Collector-base voltage  
Symbol  
Rating  
Unit  
V
CBO  
V
CEO  
V
EBO  
550  
V
V
V
Collector-emitter voltage  
Emitter-base voltage  
550  
7  
DC  
I
1  
C
Collector current  
Base current  
A
A
Pulse  
I
2  
CP  
I
1  
B
Ta = 25°C  
Tc = 25°C  
1
20  
Collector power  
dissipation  
P
W
C
JEDEC  
JEITA  
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
stg  
55 to 150  
TOSHIBA  
2-7J1A  
Note:1 Using continuously under heavy loads (e.g. the application of  
high temperature/current/voltage and the significant change in  
temperature, etc.) may cause this product to decrease in the  
Weight: 0.36 g (typ.)  
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are  
within the absolute maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
1
2009-04-24  

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