5秒后页面跳转
2SA2166 PDF预览

2SA2166

更新时间: 2024-11-14 03:56:27
品牌 Logo 应用领域
谏早电子 - ISAHAYA 驱动
页数 文件大小 规格书
4页 148K
描述
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

2SA2166 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Base Number Matches:1

2SA2166 数据手册

 浏览型号2SA2166的Datasheet PDF文件第2页浏览型号2SA2166的Datasheet PDF文件第3页浏览型号2SA2166的Datasheet PDF文件第4页 
2SA2166  
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION  
SILICON PNP EPITAXIAL TYPE  
Unit:mm  
OUTLINE DRAWING  
DESCRIPTION  
2.5  
1.5  
ISAHAYA 2SA2166 is a silicon PNP epitaxial type transistor  
designed with high collector current, low VCE(sat).  
0.5  
0.5  
FEATURE  
●High collector current  
IC(MAX)=-500mA  
●Low collector to emitter saturation voltage  
V
CE(sat)<-0.4Vmax(IC=-150mA、IB=-15mA)  
APPLICATION  
Notice: The dimension without  
For switching application, small type motor drive application.  
tolerance represent central  
value.  
TERMINAL CONNECTOR  
①:BASE  
EIAJ:SC-59  
MAXIMUM RATINGS(Ta=25℃)  
②:EMITTER  
③:COLLECTOR  
JEDEC:TO-236  
記 号  
VCEO  
VCBO  
VEBO  
IC  
定 格 値  
-60  
単 位  
V
Resemblance  
Collector to Emitter voltage  
Collector to Base voltage  
Emitter to Base voltage  
Collector current  
-60  
V
-5  
V
MARKING  
-500  
200  
mA  
mW  
PC  
Collector dissipation  
Type Name  
Tj  
Junction temperature  
Storage temperature  
150  
Tstg  
-55~150  
A W  
ELECTRICAL CHARACTERISTICS(Ta=25℃)  
Limits  
Typ  
Symbol  
Parameter  
Test condition  
Unit  
Min  
-60  
-60  
-5  
Max  
V(BR)CEO C to E break down voltage  
V(BR)CBO C to B break down voltage  
V(BR)EBO E to B break down voltage  
IC=-1mA、IB=0  
V
V
IC=-10uA、IE=0  
IE=-10uA、IC=0  
V
ICBO  
IEBO  
Collector cut off current  
Emitter cut off current  
DC forward current gain  
C to E saturation voltage  
B to E saturation voltage  
Gain band width product  
Collector output capacitance  
VCB=-50V、IE=0  
-100  
-100  
300  
nA  
nA  
---  
V
VEB=-3V、IC=0  
hFE  
IC=-150mA、VCE=-10V  
IC=-150mA、IB=-15mA  
IC=-150mA、IB=-15mA  
100  
VCE(sat)  
VBE(sat)  
fT  
-0.4  
-1.3  
V
IE=50mA、VCE=-20V、f=100MHz  
VCB=-10V、f=1MHz  
200  
MHz  
pF  
Cob  
8
20050621  
ISAHAYA ELECTRONICS CORPORATION  

与2SA2166相关器件

型号 品牌 获取价格 描述 数据表
2SA2166_08 ISAHAYA

获取价格

FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
2SA2166_10 ISAHAYA

获取价格

FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
2SA2167 ISAHAYA

获取价格

FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
2SA2168 SANYO

获取价格

2SA2168
2SA2169 SANYO

获取价格

PNP / NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications
2SA2169 ONSEMI

获取价格

Bipolar Transistor (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
2SA2169-E ONSEMI

获取价格

Bipolar Transistor (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
2SA2169-TL-E ONSEMI

获取价格

Bipolar Transistor (-)50V, (-)10A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
2SA2174J PANASONIC

获取价格

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO
2SA2179 SANYO

获取价格

PNP Epitaxial Planar Silicon Transistor 50V / 13A High-Speed Switching Applications