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2SA2161J PDF预览

2SA2161J

更新时间: 2024-11-14 19:45:11
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
3页 76K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, SC-89, 3 PIN

2SA2161J 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SC-89
包装说明:SMALL OUTLINE, R-PDSO-F3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.82
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:12 V
配置:SINGLE最小直流电流增益 (hFE):270
JESD-30 代码:R-PDSO-F3JESD-609代码:e6
湿度敏感等级:1元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子面层:Tin/Bismuth (Sn/Bi)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

2SA2161J 数据手册

 浏览型号2SA2161J的Datasheet PDF文件第2页浏览型号2SA2161J的Datasheet PDF文件第3页 
Transistors  
2SA2161J  
Silicon PNP epitaxial planar type  
For general amplification  
+0.05  
–0.03  
Unit: mm  
–0.01  
1.60  
+0.03  
0.12  
1.00 0.05  
Complementary to 2SC6037J  
3
Features  
1
2
Low collector-emitter saturation voltage VCE(sat)  
SS-Mini type package, allowing downsizing of the equipment and  
automatic insertion through the tape packing  
0.27 0.02  
(0.50)(0.50)  
5˚  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Symbol  
Rating  
15  
Unit  
V
Collector-base voltage (Emitter open) VCBO  
Collector-emitter voltage (Base open) VCEO  
Emitter-base voltage (Collector open) VEBO  
12  
V
1: Base  
5  
V
2: Emitter  
3: Collector  
EIAJ: SC-89, JEDEC: SOT-490  
SSMini3-F1 Package  
Collector current  
IC  
ICP  
PC  
Tj  
500  
1  
mA  
A
Peak collector current  
Collector power dissipation  
Junction temperature  
Storage temperature  
125  
mW  
°C  
°C  
Marking Symbol: 2U  
125  
Tstg  
55 to +125  
Electrical Characteristics Ta = 25°C 3°C  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICBO  
Conditions  
Min  
15  
12  
5  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
Forward current transfer ratio  
IC = −10 µA, IE = 0  
IC = −1 mA, IB = 0  
V
IE = −10 µA, IC = 0  
VCB = −15 V, IE = 0  
VCE = −2 V, IC = −10 mA  
V
0.1  
680  
µA  
hFE  
270  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = −200 mA, IB = −10 mA  
250  
mV  
MHz  
pF  
fT  
VCB = −2 V, IE = 10 mA, f = 200 MHz  
VCB = 10 V, IE = 0, f = 1 MHz  
200  
4.5  
Collector output capacitance  
Cob  
(Common base, input open circuited)  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: November 2004  
SJC00312BED  
1

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