是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Lifetime Buy | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.75 |
风险等级: | 5.46 | 最大集电极电流 (IC): | 0.4 A |
集电极-发射极最大电压: | 12 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 300 | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 125 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 240 |
极性/信道类型: | PNP | 最大功率耗散 (Abs): | 0.1 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 130 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SA1955_07 | TOSHIBA |
获取价格 |
General Purpose Amplifier Applications Switching and Muting Switch Application | |
2SA1955A | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 500MA I(C) | SOT-416 | |
2SA1955-A | TOSHIBA |
获取价格 |
TRANSISTOR 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP General Purp | |
2SA1955-A(TE85L) | TOSHIBA |
获取价格 |
2SA1955-A(TE85L) | |
2SA1955B | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 500MA I(C) | SOT-416 | |
2SA1955-B | TOSHIBA |
获取价格 |
TRANSISTOR 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-2H1A, 3 PIN, BIP General Purp | |
2SA1955CT-A | TOSHIBA |
获取价格 |
TRANSISTOR 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, CST3, 2-1J1A, 3 PIN, BIP Genera | |
2SA1955CT-B | TOSHIBA |
获取价格 |
TRANSISTOR 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, CST3, 2-1J1A, 3 PIN, BIP Genera | |
2SA1955F | TOSHIBA |
获取价格 |
General Purpose Amplifier Applications Switching and Muting Switch Application | |
2SA1955F-B | TOSHIBA |
获取价格 |
TRANSISTOR 400 mA, 12 V, PNP, Si, SMALL SIGNAL TRANSISTOR, ESM, 2-2HA1A, 3 PIN, BIP Genera |