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2SA1962 PDF预览

2SA1962

更新时间: 2024-11-12 04:25:51
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
6页 215K
描述
PNP Epitaxial Silicon Transistor

2SA1962 数据手册

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March 2008  
2SA1962/FJA4213  
PNP Epitaxial Silicon Transistor  
Applications  
High-Fidelity Audio Output Amplifier  
General Purpose Power Amplifier  
Features  
High Current Capability: IC = -15A  
High Power Dissipation : 130watts  
High Frequency : 30MHz.  
High Voltage : VCEO= -230V  
Wide S.O.A for reliable operation.  
Excellent Gain Linearity for low THD.  
Complement to 2SC5242/FJA4313.  
Thermal and electrical Spice models are available.  
Same transistor is also available in:  
-- TO264 package, 2SA1943/FJL4215 : 150 watts  
-- TO220 package, FJP1943 : 80 watts  
-- TO220F package, FJPF1943 : 50 watts  
TO-3P  
1.Base 2.Collector 3.Emitter  
1
Absolute Maximum Ratings*  
T = 25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
-230  
-230  
-5  
Units  
BVCBO  
BVCEO  
BVEBO  
IC  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
V
A
A
-15  
IB  
Base Current  
-1.5  
PD  
Total Device Dissipation(TC=25°C)  
Derate above 25°C  
130  
1.04  
W
W/°C  
TJ, TSTG  
Junction and Storage Temperature  
- 50 ~ +150  
°C  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Thermal Characteristics* T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Max.  
Units  
RθJC  
Thermal Resistance, Junction to Case  
0.96  
°C/W  
* Device mounted on minimum pad size  
h
Classification  
FE  
Classification  
R
O
hFE1  
55 ~ 110  
80 ~ 160  
© 2008 Fairchild Semiconductor Corporation  
2SA1962/FJA4213 Rev. A2  
www.fairchildsemi.com  
1

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