Datasheet > 2SA1962RTU

2SA1962RTU

更新时间： 2024-11-22 11:11:19

品牌	Logo	应用领域
安森美 - ONSEMI		局域网放大器晶体管
页数	文件大小	规格书
8页	560K
描述
PNP外延硅晶体管

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2SA1962RTU 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	TO-3P, 3 PIN	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
Factory Lead Time：	1 week	风险等级：	1.77
最大集电极电流 (IC)：	17 A	集电极-发射极最大电压：	250 V
配置：	SINGLE	最小直流电流增益 (hFE)：	55
JESD-30 代码：	R-PSFM-T3	JESD-609代码：	e3
元件数量：	1	端子数量：	3
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	PNP
最大功率耗散 (Abs)：	130 W	认证状态：	Not Qualified
子类别：	Other Transistors	表面贴装：	NO
端子面层：	Tin (Sn)	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	30 MHz

2SA1962RTU 数据手册

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Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers

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2SA1962RTU 替代型号

型号	品牌	替代类型	描述	数据表
2SA1962RTU	FAIRCHILD	功能相似	PNP Epitaxial Silicon Transistor

与2SA1962RTU相关器件

型号	品牌	获取价格	描述	数据表
2SA1963	SANYO	获取价格	High-Frequency Low-Noise Amp, Ultrahigh-Speed Switching Applications
2SA1963-1	ONSEMI	获取价格	TRANSISTOR,BJT,PNP,8V V(BR)CEO,50MA I(C),TO-236AB
2SA1963-2	ONSEMI	获取价格	TRANSISTOR,BJT,PNP,8V V(BR)CEO,50MA I(C),TO-236AB
2SA1963-3	ONSEMI	获取价格	TRANSISTOR,BJT,PNP,8V V(BR)CEO,50MA I(C),TO-236AB
2SA1964	NJSEMI	获取价格	Silicon PNP Power Transistor
2SA1964	ROHM	获取价格	For audio amplifier output stages/TV velocity modulation (-160V, -1.5A)
2SA1964	FOSHAN	获取价格	TO-220F
2SA1964D	ETC	获取价格	BJT
2SA1964E	ETC	获取价格	BJT
2SA1965	TOSHIBA	获取价格	TRANSISTOR (POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)

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