Datasheet > 2SA1971

2SA1971

更新时间： 2024-11-12 06:24:15

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关
页数	文件大小	规格书
1页	54K
描述
Silicon PNP Triple Diffused Type

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数据手册

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2SA1971 数据手册

SMD Type

Transistors

Silicon PNP Triple Diffused Type

2SA1971

Features

High voltage: VCE = -400 V

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-400

Unit

-400

-7

-0.5

Collector current(pulse)

Base current

I^CP

-1

I^B

-0.25

500

Collector power dissipation

P^C

1000 *

150

Junction temperature

Storage temperature range

Tstg

-55 to +150

* Mounted on ceramic substrate (250 mm²X 0.8 t)

Electrical Characteristics Ta = 25

Parameter

Symbol

I^CBO

I^EBO

Testconditons

Min

Typ

Max

-10

-1

Unit

ìA

Collector cut-off current

Emitter cut-off current

VCB =-400V, IE=0

VEB=-7V,IC=0

Collector-emitter breakdown voltage

V^(BR)CEOIC=-10mA, IB=0

-400

140

V^CE=-5V,IC=-20mA

h^FE

V^CE=-5V,IC=-100mA

450

400

-1

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

V^{CE (sat)}IC=-100mA,IB=-10mA

V^{BE (sat)}IC=-100mA,IB=-10mA

-0.4

-0.76 -0.9

f^T

VCE=-5V,IC=-50mA

MHz

Collector output capacitance

C^ob

VCB=-10V,IE=0,f=1MHz

Turn-on time

t^on

0.2

ìs

Storage time

Fall time

t^stg

2.3

0.2

ìs

t^f

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