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2SA1979 PDF预览

2SA1979

更新时间: 2024-11-25 12:56:15
品牌 Logo 应用领域
可天士 - KODENSHI 晶体放大器小信号双极晶体管功率放大器
页数 文件大小 规格书
4页 230K
描述
Medium power amplifier

2SA1979 数据手册

 浏览型号2SA1979的Datasheet PDF文件第2页浏览型号2SA1979的Datasheet PDF文件第3页浏览型号2SA1979的Datasheet PDF文件第4页 
2SA1979  
Semiconductor  
PNP Silicon Transistor  
Description  
Medium power amplifier  
PIN Connection  
E
Features  
B
Large collector current : ICMax=-500mA  
Suitable for low-Voltage operation because of  
its low saturation voltage  
C
Complementary pair with 2SC5342  
TO-92  
Ordering Information  
Type NO.  
Marking  
Package Code  
2SA1979  
A1979  
TO-92  
Absolute maximum ratings  
Characteristic  
Ta=25°C  
Symbol  
Ratings  
-40  
Unit  
Collector-Base voltage  
Collector-Emitter voltage  
Emitter-Base voltage  
Collector current  
VCBO  
VCEO  
VEBO  
IC  
V
V
-32  
-5  
V
-500  
500  
mA  
mW  
°C  
Collector dissipation  
Junction temperature  
Storage temperature  
PC  
Tj  
150  
Tstg  
-55~150  
°C  
Electrical Characteristics  
Characteristic  
Ta=25°C  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Test Condition  
Min. Typ. Max. Unit  
Collector-Base breakdown voltage  
Collector-Emitter breakdown voltage  
Emitter-Base breakdown voltage  
Collector cut-off current  
IC=-100μA, IE=0  
-40  
-32  
-5  
-
-
-
V
IC=-1mA, IB=0  
-
-
V
IE=-10μA, IC=0  
-
-
-
V
VCB=-40V, IE=0  
-0.1  
-0.1  
240  
-0.25  
-
μA  
μA  
-
Emitter cut-off current  
IEBO  
VEB=-5V, IC=0  
-
-
*
DC current gain  
hFE  
VCE=-1V, IC=-100mA  
IC=-100mA, IB=-10mA  
VCE=-6V, IC=-20mA  
VCB=-6V, IE=0, f=1MHz  
70  
-
-
Collector-Emitter saturation voltage  
Transistor frequency  
VCE(sat)  
fT  
-
V
-
200  
7.5  
MHz  
pF  
Collector output capacitance  
Cob  
-
-
*
: hFE rank / O : 70~140, Y : 120~240  
KSD-T0A028-000  
1

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