Datasheet > 2SA1972_09

2SA1972_09

更新时间： 2022-09-16 17:15:16

品牌	Logo	应用领域
东芝 - TOSHIBA		开关高压
页数	文件大小	规格书
4页	164K
描述
High-Voltage Switching Applications

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2SA1972_09 数据手册

2SA1972

TOSHIBA Transistor Silicon PNP Triple Diffused Type

2SA1972

High-Voltage Switching Applications

Unit: mm

•

High breakdown voltage: V

= −400 V

CEO

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−400

−7

Collector-emitter voltage

Emitter-base voltage

−0.5

Collector current

Pulse

−1

Base current

−0.25

900

°C

Collector power dissipation

Junction temperature

150

Storage temperature range

−55 to 150

°C

stg

JEDEC

JEITA

TO-92MOD

―

Note1: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

TOSHIBA

2-5J1A

Weight: 0.36 g (typ.)

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2009-12-21

12 3 4

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