Datasheet > 2SA1977(NE97733)

2SA1977(NE97733)

更新时间： 2022-01-19 02:55:00

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
12页	59K
描述
Discrete

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2SA1977(NE97733) 数据手册

DATA SHEET

PRELIMINARY DATA SHEET

Silicon Transistor

2SA1977

PNP EPITAXIAL SILICON TRANSISTOR

MICROWAVE AMPLIFIER

FEATURES

PACKAGE DIMENSION (in millimeters)

2.8 0.2

•

High f_T

+0.1

f_T= 8.5 GHz TYP.

1.5

0.65

–0.15

•

High gain

| S_21e

²= 12.0 dB TYP. @f = 1.0 GHz, V_CE= 8 V, I_C= 20 mA

− −

•

High-speed switching characterstics

Equivalent NPN transistor is the 2SC3583.

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

V_CB0

V_CE0

V_EB0

I_C

Rating

−20

Unit

Marking

−12

−3.0

−50

°C

Total Power Dissipation

Junction Temperature

Storage Temperature

P_T

200

T_j

150

PIN CONNECTIONS

1: Emitter

T_stg

−65 to +150

2: Base

ELECTRICAL CHARACTERISTICS (T_A= 25 °C)

3: Collector Marking; T92

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Symbol

I_CB0

I_EB0

h_FE

Test Conditions

MIN.

TYP.

MAX.

−0.1

100

Unit

V_CB= −10 V

µA

V_EB= −1 V

V_CE= −8 V, I_C= −20 mA

Gain Bandwidth Product

Collector Capacitance

Insertion Power Gain

Noise Figure

f_T

V_CE= −8 V, I_C= −20 mA, f = 1 GHz

V_CB= −10 V, I_E= 0, f = 1 MHz

V_CE= −8 V, I_C= −20 mA, f = 1.0 GHz

V_CE= −8 V, I_C= −3 mA, f = 1 GHz

6.0

8.5

0.5

GHz

C_re*

| S_21e

8.0

12.0

1.5

Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.

h_FEClassification

Rank

Marking

h_FE

T92

20 to 100

Document No. P10925EJ1V0DS00 (1st edition)

Date Published April 1996 P

Printed in Japan

1996

12 3 4 5 6 7...12

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