Datasheet > 2SA1977

2SA1977

更新时间： 2024-11-21 12:55:35

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关光电二极管
页数	文件大小	规格书
1页	36K
描述
PNP Epitaxial Silicon Transistor

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数据手册

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2SA1977 数据手册

SMD Type

TransistIoCrs

PNP Epitaxial Silicon Transistor

2SA1977

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

High fT :fT = 8.5 GHz TYP.

High gain

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

| S^21e|²= 12.0 dB TYP. @f = 1.0 GHz, VCE = -8 V, IC = -20 mA

High-speed switching characterstics

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-20

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

-12

-3.0

-50

Total power dissipation

Junction temperature

Storage temperature

P^T

200

T^j

150

Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current gain

Symbol

I^CBO

I^EBO

h^FE

Testconditons

Min

Typ

Max

-0.1

100

Unit

ìA

VCB = -10 V

VEB = -1 V

ìA

VCE = -8 V, IC = -20 mA

Gain Bandwidth Product

Collector Capacitance

Insertion Power Gain

Noise Figure

V^CE= -8 V, IC = -20 mA, f = 1 GHz

V^CB= -10 V, IE = 0, f = 1 MHz

VCE = -8 V, IC = -20 mA, f = 1.0 GHz

V^CE= -8 V, IC = -3 mA, f = 1 GHz

6.0

8.5

0.5

Cre*

| S^21e| ²

8.0

12.0

1.5

MHz

*.Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.

hFE Classification

Marking

Rank

T92

hFE

20 100

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